Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tássio Côrtes Cavalcante"'
Autor:
Ronald Hassib Galvis Chacón, Agnaldo Vieira Dias, Ângela Alves dos Santos, Paula Cristiane Secheusk, Tássio Côrtes Cavalcante, Silvio Manea, José Alexandre Diniz, Saulo Finco
Publikováno v:
Analog Integrated Circuits and Signal Processing. 112:289-300
Autor:
Eduardo Gomes Mendonça, Tassio Cortês Cavalcante, Rafael Galhardo Vaz, Evaldo Carlos Fonseca Pereira Junior, Odair Lelis Gonçalez
Publikováno v:
Brazilian Journal of Radiation Sciences, Vol 11, Iss 1A (Suppl.) (2023)
Radiation Sensitive MOSFETs (RADFETs) have been commonly used as ionizing radiation dosimeters. The threshold voltage variation is the main transistor parameter used for radiation dosimetry, as this voltage variation is directly related to total dose
Externí odkaz:
https://doaj.org/article/b98d4b9a025845ec8616a8228fe32629
Publikováno v:
Procedia CIRP, 2014, Vol.22, pp.138-141 [Peer Reviewed Journal]
With the increasing demand for more durable products, the necessity of designing more resilient products is evident. When it comes to electronic systems, many strategies have been applied to enhance the durability and performance of the operating cir