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of 267
pro vyhledávání: '"T, Tsvetkova"'
Autor:
Katia Rasheva-Yordanova, Georgi P. Dimitrov, Paulina T. Tsvetkova, Milena Bankovska, Pavel S. Petrov
Publikováno v:
Digital Presentation and Preservation of Cultural and Scientific Heritage, Vol 14 (2024)
The palimpsests represent unique historical sources that hold the potential for new insights in the field of human history. These manuscripts, rewritten and reused over time, pose challenges in the research related to their readability and interpreta
Externí odkaz:
https://doaj.org/article/01cf25f76bd145618d67a0fb185e253c
Publikováno v:
OLYMPIADS IN INFORMATICS. :159-172
The program reveals the goals of mastering primary digital literacy by students in primary school, characterizes digital skills and determines the place of the digital literacy course in the curriculum, reveals the main approaches to the selection of
Autor:
V. Shestopalov, O. Lukin, V. Starostenko, O. Ponomarenko, T. Tsvetkova, I. Koliabina, O. Makarenko, O. Usenko, O. Rud, A. Onoprienko, V. Saprykin, R. Vardapelian
Publikováno v:
Geofizicheskiy Zhurnal. 43:3-18
This paper shows the prospect to find industrial-scale hydrogen accumulations in riftogenic structures of platforms using the example of the Dnieper-Donets Aulacogene, located in the southern part of the East European Platform. Within the Dnieper-Don
Publikováno v:
19th International Conference on Surface Modification of Materials by Ion Beams (SMMIB-2015), 22.-27.11.2015, Chiang Mai, Thailand
Surface & Coatings Technology 306(2016), 341-345
Surface & Coatings Technology 306(2016), 341-345
Optical contrast formation by Ga+ ion implantation has been made use of for focused ion beam (FIB) writing of nano-scale optical patterns in tetrahedral amorphous carbon (ta-C). Initial UV-VIS optical spectroscopy results with Ga+ broad-beam ion impl
Publikováno v:
Acta Physica Polonica A 132(2017)2, 299-301
Thin film samples (d ~ 40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga+ at ion energy E = 20 keV and ion fluences D = 3E14 - 3E15 cm-2 and N+ with the same energy and ion fluence D = 3
Autor:
T. Tsvetkova, N. Kerenchev
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 951:012003
The open-source software attracts the engineering society with the accessibility, the chasing of processes, the flexibility and the possibility of making changes to the interface or in the program code processes. This paper presents the results of a
Publikováno v:
Acta Physica Polonica A. 128:953-956
Publikováno v:
Radiation Measurements. 69:35-49
Results of continuous spectral monitoring of indoor gamma background are reported for seismological application in one fault zone of the Western Caucasus. Background count rates were recorded every 5 min since 2004. Two detectors (a scintillation cry
Publikováno v:
Journal of Scientific Research and Reports. 3:2415-2421
Aims: Simultaneous measurement of groundwater Rn concentrations in Krasnodar territory (South Russia) and in southwest Turkey for seismological application (earthquake predict) was began. Study Design: Simultaneous measurement of Rn concentration in
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 307:71-76
The effects of implantation temperature and post-implantation thermal annealing on the Ga + ion beam induced optical contrast formation in hydrogenated silicon–carbon alloy films have been studied. As a result of the implantation a well-expressed