Zobrazeno 1 - 10
of 375
pro vyhledávání: '"T, Amand"'
Autor:
C. Robert, B. Han, P. Kapuscinski, A. Delhomme, C. Faugeras, T. Amand, M. R. Molas, M. Bartos, K. Watanabe, T. Taniguchi, B. Urbaszek, M. Potemski, X. Marie
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Excitons control the optical properties of transition metal dichalcogenide monolayers. Here, the authors measure the exciton fine structure of MoS2 and MoSe2 monolayers encapsulated in hBN in magnetic fields up to 30 T, and observe a brightening of t
Externí odkaz:
https://doaj.org/article/3784489091cf46cf8b782ef041abca1a
Autor:
M. Manca, M. M. Glazov, C. Robert, F. Cadiz, T. Taniguchi, K. Watanabe, E. Courtade, T. Amand, P. Renucci, X. Marie, G. Wang, B. Urbaszek
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
Monolayer transition metal dichalcogenides host excitons, bound electron-hole pairs that play a pivotal role in optoelectronic applications relying on strong light-matter interaction. Here, the authors unveil the spectroscopic signature of boson scat
Externí odkaz:
https://doaj.org/article/5b8615323f77437c82e8da39aeb1f482
Publikováno v:
Physical Review B. 106
We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton interaction
Autor:
B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, B. Urbaszek
Publikováno v:
Physical Review X, Vol 8, Iss 3, p 031073 (2018)
Transitions metal dichalcogenides (TMDs) are direct gap semiconductors in the monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20% for a single ML is governed by excitons, electron-hole
Externí odkaz:
https://doaj.org/article/e6d6768ebb51411fa7326f9fb3005938
Autor:
J.C. Sandoval-Santana, V.G. Ibarra-Sierra, H. Carrère, L.A. Bakaleinikov, V.K. Kalevich, E.L. Ivchenko, X. Marie, T. Amand, A. Balocchi, A. Kunold
Publikováno v:
Journal of Luminescence. 251:119163
Autor:
F. Cadiz, E. Courtade, C. Robert, G. Wang, Y. Shen, H. Cai, T. Taniguchi, K. Watanabe, H. Carrere, D. Lagarde, M. Manca, T. Amand, P. Renucci, S. Tongay, X. Marie, B. Urbaszek
Publikováno v:
Physical Review X, Vol 7, Iss 2, p 021026 (2017)
The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS_{2} an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low
Externí odkaz:
https://doaj.org/article/45bc5bbfd1d949fca67aef7e4b15dcb1
Publikováno v:
Journal of Optics. 24:045201
We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAs$_x$N$_{1-x}$ circular polarimeter with the intensity, degree of circular polarization and handedness of an incident
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Publikováno v:
New Journal of Physics, Vol 16, Iss 4, p 045008 (2014)
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized lig
Externí odkaz:
https://doaj.org/article/23492e61cb294ec7823b26058db01f0f
Publikováno v:
New Journal of Physics, Vol 15, Iss 9, p 095016 (2013)
Time-resolved optical spectroscopy experiments in (111)-oriented GaAs/AlGaAs quantum wells (QWs) show a strong electric field dependence of the conduction electron spin relaxation anisotropy. This results from the interplay between the Dresselhaus an
Externí odkaz:
https://doaj.org/article/352dd22c7a094c6dbb0cd871a1098f5e