Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Szu-Ling Liu"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:2165-2177
This paper presents a novel dual-band voltage-controlled oscillator (VCO) in a standard 0.18-μm CMOS technology. With special design in the LC tank, the circuit exhibits two oscillation modes in different frequency bands. The frequency band selectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd8f19ac3d8e8bde3302b63121387be
https://doi.org/10.1109/tmtt.2012.2195674
https://doi.org/10.1109/tmtt.2012.2195674
Publikováno v:
Solid-State Electronics. 62:90-93
We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0b5dcbebe3ce33c8c5ec9eb49907c0b
https://doi.org/10.1016/j.sse.2011.04.010
https://doi.org/10.1016/j.sse.2011.04.010
Publikováno v:
European Polymer Journal. 44:3482-3492
Synthesis of organosilicate (orgSiO2) via sol-gel process utilizing tetraethoxysilane (TEOS) and diethoxydimethylsilane (DEDMS) as precursors was carried out in this work. Various amounts of orgSiO2 were blended with fluorinated poly(amic acid) (PAA)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c32fa64c980085b2b61a784a851a9bd
https://doi.org/10.1016/j.eurpolymj.2008.08.028
https://doi.org/10.1016/j.eurpolymj.2008.08.028
Publikováno v:
IEEE Microwave and Wireless Components Letters. 22:645-647
A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 $\mu{\rm m}$ CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35ccc0dd1997d5bdb41bd878aa1d05c7
https://doi.org/10.1109/lmwc.2012.2227465
https://doi.org/10.1109/lmwc.2012.2227465
Publikováno v:
IEEE Microwave and Wireless Components Letters. 22:321-323
This letter presents a novel bias-varied low-power K-band voltage controlled oscillator (VCO) in a standard 90 nm CMOS technology. This circuit exhibits low power consumption of ≤3mW and a 12.2% tuning range with low phase noise characteristic. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::108cc2af62b1a216c20332ac50b53128
https://doi.org/10.1109/lmwc.2012.2197817
https://doi.org/10.1109/lmwc.2012.2197817
Publikováno v:
IEEE Microwave and Wireless Components Letters. 20:459-461
A K-band low-power and low-phase-noise voltage-controlled oscillator (VCO) is presented in this letter. By utilizing four-coil transformer feedback and forward body bias topology, good performances are obtained under a low-power supply with a 5.1% tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eabac772dc8e86a6dd8b5d245b9cc9b
https://doi.org/10.1109/lmwc.2010.2049736
https://doi.org/10.1109/lmwc.2010.2049736
Publikováno v:
IEEE Electron Device Letters. 30:75-77
We report low-threshold-voltage (Vt) TaN/HfLaO n-MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 degC. The gate-first and self-aligned TaN/HfLaO n-MOSFETs using Ni/Sb SPD-formed source-drain junctions showed a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fb9ca39619f8e5e360fdbb1c0772dbb
https://doi.org/10.1109/led.2008.2009011
https://doi.org/10.1109/led.2008.2009011
Publikováno v:
2012 Asia Pacific Microwave Conference Proceedings.
In this paper, a two-stage 2.4 GHz power amplifier (PA) using the high-breakdown-voltage asymmetric NMOSFETs was implemented in a 0.18-μm CMOS technology. In this process, the conventional NMOSFETs have a drain-to-source breakdown voltage (BV dss )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f529b78fe3ded3a60f63267cc85e860
https://doi.org/10.1109/apmc.2012.6421640
https://doi.org/10.1109/apmc.2012.6421640
Publikováno v:
2011 IEEE International Conference of Electron Devices and Solid-State Circuits.
This paper investigates the optimization method for two low-power circuit techniques in low-power LC-VCO designs: Transformer feedback and forward body-bias. In addition to theoretical analysis, a low-power, low-voltage X-band VCO using these two tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbdfa9d84498fc4e39b2cca25e6aca2e
https://doi.org/10.1109/edssc.2011.6117742
https://doi.org/10.1109/edssc.2011.6117742
Publikováno v:
ECS Meeting Abstracts. :2098-2098
In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83558e7924ad7a413a8f2bf2ccf8482b
https://doi.org/10.1149/ma2011-02/31/2098
https://doi.org/10.1149/ma2011-02/31/2098