Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Szu Yen Hsiung"'
Autor:
Bing-Yang Shih, Chien Liu, Tsung-Ming Lee, Chun-Hu Cheng, Chun-Yen Chang, Szu-Yen Hsiung, Yu-Pin Lan, Chih-Chieh Hsu, Yi-Chun Tung, Hsiao-Hsuan Hsu, You-Ting Lee, Hsuan-Han Chen
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately susta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0279e191e813691cf21d272036fbcda
https://doi.org/10.1109/edssc.2019.8753958
https://doi.org/10.1109/edssc.2019.8753958
Autor:
Chun-Hu Cheng, Wei Chun Wang, Chien Liu, Tsung Ming Lee, Hsiao-Hsuan Hsu, Szu Yen Hsiung, Hsiu Ming Liu, Zhong Ying Huang, Shih An Wang, Yu Chi Fan, Sheng Lee, Wu-Ching Chou, Bing Yang Shih, Zi You Huang, Yi Chun Tung, Hsuan Han Chen, Chien Liang Lin
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGA01
In this work, we demonstrated that the 5-nm-thick HfAlO x negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec−1 subthreshold swing (SS), an ultralow I off of 7.44 fA μm−1, and a high I on /I off ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0ad40c2c6150ef126a7c4c0b9087b77
https://doi.org/10.7567/1347-4065/ab6420
https://doi.org/10.7567/1347-4065/ab6420
Autor:
Chien Liu, Hsuan-Han Chen, Yi-Chun Tung, Wei-Chun Wang, Zhong-Ying Huang, Bing-Yang Shih, Szu-Yen Hsiung, Shih-An Wang, Yu-Chi Fan, Tsung-Ming Lee, Chien-Liang Lin, Zi-You Huang, Hsiu-Ming Liu, Sheng Lee, Wu-Ching Chou, Chun-Hu Cheng, Hsiao-Hsuan Hsu
Publikováno v:
Japanese Journal of Applied Physics; Apr2020, Vol. 59 Issue SG, p1-1, 1p