Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Sztenkiel, D"'
This study investigates the Jahn-Teller effect and magnetic anisotropy in wurtzite Ga$_{1-x}$Mn$_x$N. We search for structural and electronic properties such as the atomic displacements, the Jahn-Teller energy gain, and the density of states. The res
Externí odkaz:
http://arxiv.org/abs/2410.22035
Autor:
Sztenkiel, D., Gas, K., Szwacki, N. Gonzalez, Foltyn, M., Sliwa, C., Wojciechowski, T., Domagala, J. Z., Hommel, D., Sawicki, M., Dietl, T.
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is
Externí odkaz:
http://arxiv.org/abs/2406.13534
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentra
Externí odkaz:
http://arxiv.org/abs/2006.12945
Autor:
Sztenkiel, D., Foltyn, M., Mazur, G. P., Adhikari, R., Kosiel, K., Gas, K., Zgirski, M., Kruszka, R., Jakiela, R., Li, Tian, Piotrowska, A., Bonanni, A., Sawicki, M., Dietl, T.
Publikováno v:
Nat. Commun. 7, 13232 (2016)
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap regio
Externí odkaz:
http://arxiv.org/abs/1604.06937
Autor:
Proselkov, O., Sztenkiel, D., Stefanowicz, W., Aleszkiewicz, M., Sadowski, J., Dietl, T., Sawicki, M.
Publikováno v:
Appl. Phys. Lett. 100, 262405 (2012)
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already
Externí odkaz:
http://arxiv.org/abs/1205.4824
Autor:
Sawicki, M., Guziewicz, E., Lukasiewicz, M. I., Proselkov, O., Kowalik, I. A., Lisowski, W., Dluzewski, P., Wittlin, A., Jaworski, M., Wolska, A., Paszkowicz, W., Jakiela, R., Witkowski, B. S., Wachnicki, L., Klepka, M. T., Luque, F. J., Arvanitis, D., Sobczak, J. W., Krawczyk, M., Jablonski, A., Stefanowicz, W., Sztenkiel, D., Godlewski, M., Dietl, T.
Publikováno v:
Phys. Rev. B 88, 085204 (2013)
A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient t
Externí odkaz:
http://arxiv.org/abs/1201.5268
Autor:
Gieraltowska, S., Sztenkiel, D., Guziewicz, E., Godlewski, M., Luka, G., Witkowski, B. S., Wachnicki, L., Lusakowska, E., Dietl, T., Sawicki, M.
Publikováno v:
Acta Physica Polonica A 119 (2011) 333-336
We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thic
Externí odkaz:
http://arxiv.org/abs/1107.5401
Autor:
Bonanni, A., Sawicki, M., Devillers, T., Stefanowicz, W., Faina, B., Li, Tian, Winkler, T. E., Sztenkiel, D., Navarro-Quezada, A., Rovezzi, M., Jakiela, R., Grois, A., Wegscheider, M., Jantsch, W., Suffczynski, J., D'Acapito, F., Meingast, A., Kothleitner, G., Dietl, T.
Publikováno v:
Phys. Rev. B 84, 035206 (2011)
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectros
Externí odkaz:
http://arxiv.org/abs/1008.2083
Autor:
Wrobel, J., Zagrajek, P., Czapkiewicz, M., Bek, M., Sztenkiel, D., Fronc, K., Hey, R., Ploog, K. H., Bulka, B. R.
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data.
Externí odkaz:
http://arxiv.org/abs/0912.2004
Autor:
Sztenkiel, D., Świrkowicz, R.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2008 40(4):766-769
