Zobrazeno 1 - 10
of 259
pro vyhledávání: '"Szkopek T"'
Bismuth, the heaviest of all group V elements with strong spin-orbit coupling, is famously known to exhibit many interesting transport properties, and effects such as Shubnikov-de Haas and de Haas-van Alphen were first revealed in its bulk form. Howe
Externí odkaz:
http://arxiv.org/abs/2402.18441
Autor:
Vijayakrishnan, Sujatha, Poitevin, F., Yu, Oulin, Berkson-Korenberg, Z., Petrescu, M., Lilly, M. P, Szkopek, T., Agarwal, Kartiek, West, K. W., Pfeiffer, L. N., Gervais, G.
Publikováno v:
Nature Communications 14, 3906 (2023)
We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$ $cm^2/Vs)$ and wi
Externí odkaz:
http://arxiv.org/abs/2302.12147
Autor:
Dickerson, W., Tayari, V., Fakih, I., Korinek, A., Caporali, M., Serrano-Ruiz, M., Peruzzini, M., Heun, S., Botton, G. A., Szkopek, T.
Publikováno v:
APPLIED PHYSICS LETTERS 112, 173101 (2018)
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence effici
Externí odkaz:
http://arxiv.org/abs/1804.03639
Autor:
Tayari, V., Senkovskiy, B. V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C. -Y., Avila, J., Asensio, M., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grüneis, A., Szkopek, T.
Publikováno v:
Phys. Rev. B 97, 045424 (2018)
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been ex
Externí odkaz:
http://arxiv.org/abs/1802.08069
Autor:
Guillemette, J., Hemsworth, N., Vlasov, A., Kirman, J., Mahvash, F., Lévesque, P. L., Siaj, M., Martel, R., Gervais, G., Studenikin, S., Sachrajda, A., Szkopek, T.
Publikováno v:
Phys. Rev. B 97, 161402 (2018)
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was
Externí odkaz:
http://arxiv.org/abs/1802.08295
We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryoge
Externí odkaz:
http://arxiv.org/abs/1706.00458
Autor:
Hemsworth, N., Tayari, V., Telesio, F., Xiang, S., Roddaro, S., Caporali, M., Ienco, A., Serrano-Ruiz, M., Peruzzini, M., Gervais, G., Szkopek, T., Heun, S.
Publikováno v:
Phys. Rev. B 94, 245404 (2016)
Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T, from which
Externí odkaz:
http://arxiv.org/abs/1607.08677
Publikováno v:
2D Mater. 3 041005
The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein th
Externí odkaz:
http://arxiv.org/abs/1604.04228
Publikováno v:
Phys. Rev. Applied 5, 064004 (2016)
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to photo-oxidation, improvem
Externí odkaz:
http://arxiv.org/abs/1512.00038
Autor:
Bennaceur, K., Guillemette, J., Lévesque, P. L., Cottenye, N., Mahvash, F., Hemsworth, N., Kumar, A., Murata, Y., Heun, S., Goerbig, M. O., Proust, C., Siaj, M., Martel, R., Gervais, G., Szkopek, T.
Publikováno v:
Phys. Rev. B 92, 125410 (2015)
We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis
Externí odkaz:
http://arxiv.org/abs/1510.03506