Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Syun Ming Jang"'
Autor:
Peng-Soon Lim, Liang-Gi Yao, Syun-Ming Jang, Y. Jin, Vincent S. Chang, S.-C. Chen, H.J. Tao, Fong-Yu Yen, Yong-Tian Hou, Mong-Song Liang, H.J. Lin, Chi Chun Chen, Peng-Fu Hsu, C.L. Hung, Jian-Yong Jiang
Publikováno v:
ECS Transactions. 1:113-123
A semi-empirical, stacked capacitor model was developed to calculate the dielectric constants (k) and deposition rates of hafnium silicate (HfSiO) deposited by nano-laminated atomic layer deposition (NL-ALD) from the HfO2 and SiO2 ALD cycles (m and n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78db6fafa7ddcb96b821044b353639e3
https://doi.org/10.1149/1.2209336
https://doi.org/10.1149/1.2209336
Autor:
Lain-Jong Li, Chiu-Chih Chiang, Mao-Chieh Chen, Zhen-Cheng Wu, Syun-Ming Jang, Mong-Song Liang
Publikováno v:
Japanese Journal of Applied Physics. 43:7415-7418
In this work, we investigate the effects of oxygen (O2) and nitrogen (N2) plasma treatments on the copper surface of aluminum/amorphous silicon-nitricarbide/copper (Al/α-SiCN/Cu) metal–insulator–metal (MIM) capacitors with respect to their leaka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454eebe64ac29847b482cd2afe627aef
https://doi.org/10.1143/jjap.43.7415
https://doi.org/10.1143/jjap.43.7415
Publikováno v:
Thin Solid Films. 466:54-61
The properties and thermal stability of porous organic low-dielectric-constant films (version 8 and version 9) have been studied in this research. These porous films were obtained by spin coating, followed by baking and furnace curing. Both porous fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a89524e2539e5ddedded24b383449a
https://doi.org/10.1016/j.tsf.2004.01.112
https://doi.org/10.1016/j.tsf.2004.01.112
Publikováno v:
Thin Solid Films. 460:167-174
The mechanical properties of porous low-dielectric-constant (low-k) thin films have been investigated for the stability evaluation of multilevel-interconnect structures using nanoindentation, microscratch, and four-point bending tests. Stress–strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5995f9a2ecd3b4920d2e41a2a35cd6bf
https://doi.org/10.1016/j.tsf.2004.01.074
https://doi.org/10.1016/j.tsf.2004.01.074
Publikováno v:
Japanese Journal of Applied Physics. 42:5246-5250
This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon–nitrocarbide (α-SiCN:H) films with different hydrogen contents and dielectric con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7947391cf2111baad6a49b545193b33
https://doi.org/10.1143/jjap.42.5246
https://doi.org/10.1143/jjap.42.5246
Autor:
Chung-Chi Ko, Chiu-Chih Chiang, Mao-Chieh Chen, Mong-Song Liang, Zhen-Cheng Wu, Syun-Ming Jang
Publikováno v:
Japanese Journal of Applied Physics. 42:4273-4277
This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical vapor deposited (PECVD) α-SiC:H silicon carbide films (with k-values less than 5) deposited using trimethylsilane, (CH3)3SiH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4034814e297829217fab4ea6fe9759a
https://doi.org/10.1143/jjap.42.4273
https://doi.org/10.1143/jjap.42.4273
Autor:
Mao-Chieh Chen, Chen-Hua Yu, Hsi-Ping Chen, Mong-Song Liang, Syun-Ming Jang, Chiu-Chih Chiang, Zhen-Cheng Wu, Wei-Hao Wu, Chung-Chi Ko
Publikováno v:
Japanese Journal of Applied Physics. 42:4489-4494
In this work, we investigate the thermal stability and physical and barrier properties of three species of plasma enhanced chemical vapor deposition (PECVD) α-SiC:N:H silicon carbide films with different carbon and nitrogen contents and dielectric c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17b3f51454f241997f4ad8f22046d8aa
https://doi.org/10.1143/jjap.42.4489
https://doi.org/10.1143/jjap.42.4489
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
Autor:
Kuo-Nan Yang, Yeou-Ming Lin, Syun-Ming Jang, Mo-Chiun Yu, Mong-Song Liang, Douglas Yu, Hsin-Hui Huang, Ming-Jer Chen
Publikováno v:
IEEE Transactions on Electron Devices. 48:1159-1164
This paper examines the edge direct tunneling (EDT) of electron from n/sup +/ polysilicon to underlying n-type drain extension in off-state n-channel MOSFETs having ultrathin gate oxide thicknesses (1.4-2.4 nm). It is found that for thinner oxide thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4aa31b486d781d25330203f16e1865
https://doi.org/10.1109/16.925242
https://doi.org/10.1109/16.925242
Autor:
Tuo-Hong Hou, Shyh-Fann Ting, Shih-Chang Chen, Mong-Song Liang, Ming-Fang Wang, Mo-Chiun Yu, Yean-Kuen Fang, Chein-Hao Chen, Syun-Ming Jang, Douglas Yu, Yong-Shiuan Tsair, Chih-Wei Yang
Publikováno v:
IEEE Transactions on Electron Devices. 48:2769-2776
The electrical properties affected by the bottom oxide materials and the post-deposition treatment on the ultrathin (down to 1.6 nm) nitride/oxide (N/O) stacks, prepared by rapid thermal chemical vapor deposition (RTCVD) with two-step NH/sub 3//N/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e130c88dda6b17f69fb7dcaf0f9c7c60
https://doi.org/10.1109/16.974702
https://doi.org/10.1109/16.974702
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2986-2991
In this article, we adopted the rapid thermal oxidation (RTO) method to grow gate oxide layers on Si substrates. These RTO oxides were grown in both O2 atmosphere (dry RTO oxide) and in H2 and O2 mixed atmosphere (wet RTO oxide) at above 1000 °C. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5c431af1d044e75d1593d3d42677da
https://doi.org/10.1116/1.1312374
https://doi.org/10.1116/1.1312374