Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Syuichi Sanki"'
Autor:
Yuichiro Hotta, Shigeru Noguchi, Hiroyuki Miyashita, Naoyuki Ishiwata, Yutaka Miyahara, Youhei Yamashita, Minoru Naitou, Hiroshi Maruyama, Syuichi Sanki, Tomohiko Furukawa, Satoru Asai, Kouji Hosono
Publikováno v:
SPIE Proceedings.
This paper presents about 65 nm-node alternating phase shift mask (APSM) fabrication. One of issue in fabrication of 65 nm-node APSM is second layer patterning process. As chromium (Cr) pattern CD becomes narrow, tighter edge placement accuracy of se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c40d76bd232fb2663b100033e0c42f75
https://doi.org/10.1117/12.467487
https://doi.org/10.1117/12.467487
Autor:
Masami Nara, Hiroyuki Miyashita, Morihisa Hoga, Shiaki M. Murai, Hidetaka Saitou, Yasuhiro Koizumi, Hiroshi Fujita, Syuichi Sanki, Naoya Hayashi, Yasutaka Morikawa, Tatsuhiko Kamibayashi
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
An alternating phase shift mask (Alt-PSM) enhances resolution and focus margin in wafer print. Therefore it comes into increasing use for device fabrication by KrF and ArF lithography. We have started production of alt-PSMs using quartz etched shifte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9497271f22fc5cd132b49806a4893e0b
https://doi.org/10.1117/12.458273
https://doi.org/10.1117/12.458273
Publikováno v:
SPIE Proceedings.
Critical-dimension (CD) uniformity of the mask is the most critical issue for the quarter micron technology and below. Resist development methods, baking temperature uniformity and etching methods are very important parameters for the mask making to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8561e56f8a1577b8a7b66595488bc907
https://doi.org/10.1117/12.328818
https://doi.org/10.1117/12.328818