Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Syuan Yong Huang"'
Autor:
Tai Fa Young, Guan Ru Liu, Jung Hui Chen, Ting-Chang Chang, Geng Wei Chang, Chi Fong Ai, Yong En Syu, Tai Ya Hsiang, Kuan-Chang Chang, Min Chen Chen, Jen-Wei Huang, Kai Huang Chen, Yu Ting Su, Tsung-Ming Tsai, Min Chuan Wang, Kuo Hsiao Liao, Rui Zhang, Tian Jian Chu, Simon M. Sze, Jhih Hong Pan, Syuan Yong Huang
Publikováno v:
The Journal of Supercritical Fluids. 178:105350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfb924245e294149118c2295f341bbe
https://doi.org/10.1016/j.supflu.2021.105350
https://doi.org/10.1016/j.supflu.2021.105350
Autor:
Jhih Hong Pan, Syuan Yong Huang, Geng Wei Chang, Min Chen Chen, Jung Hui Chen, Simon M. Sze, Chi Fong Ai, Kuan-Chang Chang, Tai Fa Young, Jen-Wei Huang, Tsung-Ming Tsai, Tian Jian Chu, Guan Ru Liu, Yu Ting Su, Min Chuan Wang, Ting-Chang Chang, Kuo Hsiao Liao, Rui Zhang, Ya-Hsiang Tai, Yong En Syu, Kai Huang Chen
Publikováno v:
The Journal of Supercritical Fluids. 85:183-189
We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f79b2d19e6af9b204f6bb14f7efe3d
https://doi.org/10.1016/j.supflu.2013.09.002
https://doi.org/10.1016/j.supflu.2013.09.002
Autor:
Wen-Jen Chen, Kai-Huang Chen, Simon M. Sze, Kuan-Chang Chang, Chao Chen, Chih-Cheng Shih, Ting-Chang Chang, Rui Zhang, Huei-Jruan Wang, Tsung-Ming Tsai, Jung-Hui Chen, Xuan Huang, Fengyan Zhang, Syuan-Yong Huang
Publikováno v:
IEEE Electron Device Letters. 35:1227-1229
In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. To analyze this method, the ITO/ZnO:SiO 2 /ZnOx/TiN bilayer structure wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28771e08228a5140d6c6e55fca34d6c7
https://doi.org/10.1109/led.2014.2360525
https://doi.org/10.1109/led.2014.2360525
Autor:
Chih-Cheng Shih, Simon M. Sze, Jen-Chung Lou, Jung-Hui Chen, Tai-Fa Young, Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Kai-Huang Chen, Hsin-Lu Chen, Syuan-Yong Huang, Ding-Hua Bao, Rui Zhang, Kuan-Chang Chang
Publikováno v:
IEEE Electron Device Letters. 35:633-635
Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e20b6debc9ed6e8b70444ba40553d7
https://doi.org/10.1109/led.2014.2316673
https://doi.org/10.1109/led.2014.2316673
Autor:
Shu-Ping Liang, Kai-Huang Chen, Simon M. Sze, Jen-Chung Lou, Kuan-Chang Chang, Wen-Jen Chen, Min-Chen Chen, Syuan-Yong Huang, Hsin-Lu Chen, Ting-Chang Chang, Rui Zhang, Yong-En Syu, Jung-Hui Chen, Tsung-Ming Tsai, Tai-Fa Young
Publikováno v:
IEEE Electron Device Letters. 35:630-632
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide $({\rm Gd}{:}{\rm SiO}_{2})$ resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5658fd2eaea366a5fa381c09b84730b
https://doi.org/10.1109/led.2014.2316806
https://doi.org/10.1109/led.2014.2316806
Autor:
Min-Chen Chen, Syuan-Yong Huang, Kuan-Chang Chang, Ding-Hua Bao, Simon M. Sze, Tsung-Ming Tsai, Kai-Huang Chen, Tian-Jian Chu, Tai-Fa Young, Zhi-Yang Wang, Yong-En Syu, Jung-Hui Chen, Ting-Chang Chang, Rui Zhang
Publikováno v:
IEEE Electron Device Letters. 35:530-532
In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34bfbdf31d273a508c595457e4b2d6b1
https://doi.org/10.1109/led.2014.2311295
https://doi.org/10.1109/led.2014.2311295
Autor:
Kuan-Chang Chang, Yin-Chih Pan, Ding-Hua Bao, Jen-Chung Lou, Syuan-Yong Huang, Jen-Wei Huang, Tsung-Ming Tsai, Simon M. Sze, Ting-Chang Chang, Dershin Gan, Kai-Huang Chen, Rui Zhang, Yong-En Syu, Jung-Hui Chen, Hui-Chun Huang, Tai-Fa Young
Publikováno v:
Nanoscale Research Letters
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::468b5d5e56294513d6bed1b1916ad855
https://doi.org/10.1186/1556-276x-8-523
https://doi.org/10.1186/1556-276x-8-523
Autor:
Jen-Chung Lou, Sheng-Yao Huang, Kuan-Chang Chang, Tai-Fa Young, Kai-Huang Chen, Hsin-Lu Chen, Syuan-Yong Huang, Tsung-Ming Tsai, Jung-Hui Chen, Rui Zhang, Chih-Cheng Shih, Ting-Chang Chang, Min-Chen Chen
Publikováno v:
Applied Physics Letters. 104:243508
A low-temperature ultra-violet (UV) light enhanced supercritical CO2 (SCCO2) fluid treatment is employed to improve the performance of In-Ga-Zn-O (IGZO) thin film transistor (TFT) device. In this study, amorphous IGZO film deposited by sputtering is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9506fd8bc68065cfc646e00c859a112
https://doi.org/10.1063/1.4883899
https://doi.org/10.1063/1.4883899
Autor:
Min-Chen Chen, Jen-Chung Lou, Simon M. Sze, Jhih-Hong Pan, Syuan-Yong Huang, Cheng-Wei Tung, Hsin-Lu Chen, Ting-Chang Chang, Kuan-Chang Chang, Yong-En Syu, Jung-Hui Chen, Chih-Cheng Shih, Tai-Fa Young, Tsung-Ming Tsai, Rui Zhang, Kai-Huang Chen
Publikováno v:
Journal of Applied Physics. 114:234501
In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d32bfc6471ca49b4f85013e90dfd34e4
https://doi.org/10.1063/1.4843695
https://doi.org/10.1063/1.4843695
Autor:
Syuan-Yong Huang, Yong-En Syu, Tian-Jian Chu, Jung-Hui Chen, Rui Zhang, Simon M. Sze, Kuan-Chang Chang, Yin-Chih Pan, Tsung-Ming Tsai, Kai-Huang Chen, Jen-Chung Lou, Chih-Cheng Shih, Tai-Fa Young, Ya-Liang Yang, Chih-Hung Pan, Yu-Ting Su, Ting-Chang Chang
Publikováno v:
Nanoscale Research Letters
In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d46be2bf7b7ddb84abc6ce3c059e704
http://europepmc.org/articles/PMC3874615
http://europepmc.org/articles/PMC3874615