Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Syotaro Ono"'
Autor:
Hiroaki Yamashita, Takenori Yasuzumi, Wataru Saito, Masataka Tsuji, Masaru Izumisawa, Syotaro Ono, Hisao Ichijo
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c395cda3634bd3db13b39523d6011bf4
https://doi.org/10.1109/ispsd.2018.8393595
https://doi.org/10.1109/ispsd.2018.8393595
Autor:
Wataru Saito, Masakazu Yamaguchi, Mizuki Ono, L. Zhang, Mitsuo Koike, Yohei Hayase, Shogo Itai, Syotaro Ono, Kazuya Matsuzawa, Keiryo Hara
Publikováno v:
Microelectronics Reliability. 55:1559-1563
Superjunction (SJ) MOSFETs with low on-resistance and high sustain voltage are widely used as main switching power devices. For the p / n -pillars of SJ-power devices, precise doping at low-doping region below 10 16 cm − 3 concentrations is require
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce7cdc8ae973527fa81ddd39ce8d608
https://doi.org/10.1016/j.microrel.2015.06.142
https://doi.org/10.1016/j.microrel.2015.06.142
Autor:
Shunsuke Katoh, Akihiro Oyama, Hideyuki Ura, Gentaro Ookura, Takayuki Yoshihira, Eiji Shimada, Syotaro Ono, Wataru Saito, Yusuke Kawaguchi
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of Super-junction (SJ) MOSFET on temperature and studied t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4552fdbf8954aa9a71214aa14cdae5
https://doi.org/10.1109/ispsd.2015.7123397
https://doi.org/10.1109/ispsd.2015.7123397
Autor:
Wataru Saito, Yoshitaka Hokomoto, Hideyuki Ura, Masato Nashiki, Kenji Mii, Jun Onodera, Hiroaki Yamashita, Syotaro Ono
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0c533b67ccebaa83019c2894e51c50
https://doi.org/10.1109/ispsd.2015.7123475
https://doi.org/10.1109/ispsd.2015.7123475
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a21e030a072161a224b95202a1f99799
https://doi.org/10.1109/ispsd.2014.6855982
https://doi.org/10.1109/ispsd.2014.6855982
Autor:
Masakazu Yamaguchi, Wataru Saito, L. Zhang, Syotaro Ono, Hiroyuki Sugaya, Shingo Sato, Hiroshi Ohta, Miho Watanabe
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
600V-class superjunction (SJ)-MOSFETs were developed using our original high-resolution Scanning Spread Resistance Microscopy (SSRM) analysis technology [1] for optimization of trench filling process for the first time. The SSRM analysis is a powerfu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341a0d5c238fd60f9b035cb12312d736
https://doi.org/10.1109/ispsd.2009.5158062
https://doi.org/10.1109/ispsd.2009.5158062
Autor:
Masakazu Yamaguchi, Kenichi Tokano, Syotaro Ono, Wataru Saito, Masataka Tsuji, Yasuto Sumi, Masaru Izumisawa, S. Kurushima
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
We investigated the profile dependency of specific on-resistance (RonA) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec98c2647f71b5df78b302bd05f55318
https://doi.org/10.1109/ispsd.2008.4538923
https://doi.org/10.1109/ispsd.2008.4538923
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
We report the experimental results detailed about the n-buffer layer (n-BAL: n-bottom assist layer) of 600 V-class semi-SJ MOSFET, and discuss about the design optimization by comparing the trade-off characteristics between the specific on-resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e837336de53314d58e3da1cca278fd45
https://doi.org/10.1109/ispsd.2007.4294923
https://doi.org/10.1109/ispsd.2007.4294923
Autor:
Syotaro Ono, Akio C O Patent Divis Nakagawa, Yusuke Kawaguchi, Akio Takano, Noboru Matsuda, M. Akiyama, Yoshihiro Yamaguchi
Publikováno v:
2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
We proposed a new MOSBD, which integrates MOSFET and Schottky Barrier Diode (SBD) in a single chip. The features of the device are that the SBD are fabricated on fine mesa of less than 0.2μm, surrounded by trenches and optimally distributed inside t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9364dca14682719f10fd3b69f917af04
https://doi.org/10.1109/ispsd.2006.1666075
https://doi.org/10.1109/ispsd.2006.1666075
Publikováno v:
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
This paper analyzes the effects of parasitic inductances over the conversion efficiency of DC-DC converters by using Spice simulator. It was found that the self-turn-on of the low side MOSFET is triggered by large body diode reverse recovery current.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02160978a3300062fd4be717ea66a4d8
https://doi.org/10.1109/ispsd.2005.1488028
https://doi.org/10.1109/ispsd.2005.1488028