Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Sylwester Porowski"'
Autor:
Sylwester Porowski, Bohdan Sadovyi, Stanislaw Krukowski, Petro Sadovyi, Izabella Grzegory, Jacek Piechota
Publikováno v:
Materials
Volume 14
Issue 5
Materials, Vol 14, Iss 1306, p 1306 (2021)
Volume 14
Issue 5
Materials, Vol 14, Iss 1306, p 1306 (2021)
The dissolution of molecular nitrogen in Ga and Fe was investigated by ab initio calculations and some complementary experiments. It was found that the N bonding inside these solvents is fundamentally different. For Ga, it is between Ga4s and Ga4p an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d2df017b1f8b363bec8fce3765090e7
https://pubmed.ncbi.nlm.nih.gov/33803174
https://pubmed.ncbi.nlm.nih.gov/33803174
Autor:
Bohdan Sadovyi, S. Stelmakh, Izabella Grzegory, Sylwester Porowski, Małgorzata Wierzbowska, Silvia Boccato, Tetsuo Irifune, Stanislaw Gierlotka
Publikováno v:
Physical Review B. 102
The $p\text{\ensuremath{-}}T$ conditions of the solid-solid phase transition from the wurtzite to rocksalt structure in GaN are determined both experimentally and by ab initio calculations. Experimental evaluation was based on the x-ray absorption me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201f97abc38fb5615d2d20f7c3c3ce4a
https://doi.org/10.1103/physrevb.102.235109
https://doi.org/10.1103/physrevb.102.235109
Publikováno v:
Journal of Applied Physics
Tetrahedrally-bonded materials, such as silicon, diamond, or gallium nitride, are characterized by a low coordination number of 4 in the crystalline phase and, in general, can exhibit a liquid phase with higher density and coordination. This leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a4bb6f11eeda7f0723355db294791f8
https://zenodo.org/record/3559294
https://zenodo.org/record/3559294
First Step in Exploration of Fe-Ga-N System for Efficient Crystallization of GaN at High N2 Pressure
Autor:
Sylwester Porowski, Igor Dzięcielewski, Izabella Grzegory, Petro Sadovyi, Michal Bockowski, B. Sadovyi
Publikováno v:
physica status solidi (a). 215:1700897
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6230fa8f76c4c2d40d94942813bbd57
https://doi.org/10.1002/pssa.201700897
https://doi.org/10.1002/pssa.201700897
Autor:
Izabella Grzegory, M. Wróblewski, Stanisław Krukowski, Sylwester Porowski, Michal Bockowski, Bolesław Łucznik
Publikováno v:
Journal of Crystal Growth. 304:299-309
Ab initio quantum mechanic density functional theory (QM DFT) calculations were used to study the interaction of molecular nitrogen (N2) with metallic Li surface. The calculation has been made using Dmol commercial package provided by Accelrys Inc. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db618102c9c548f0451355408411595b
https://doi.org/10.1016/j.jcrysgro.2007.03.008
https://doi.org/10.1016/j.jcrysgro.2007.03.008
Autor:
Roland Winter, Smirnovas, Stefan Grudzielanek, Revanur Ravindra, Nicolini C, Anna Loksztejn, Wojciech Dzwolak, Ralf Jansen, Sylwester Porowski
Publikováno v:
Biochemistry. 44:8948-8958
A model cosolvent, ethanol, has profound and diversified effects on the amyloidogenic self-assembly of insulin, yielding spectroscopically and morphologically distinguishable forms of beta-aggregates. The alcohol reduces hydrodynamic radii of insulin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eecb8b77ef088e1cb0f7a19e4c210ecc
https://doi.org/10.1021/bi050281t
https://doi.org/10.1021/bi050281t
Autor:
Yufeng Zhang, Lukasz Plucinski, Alexei Zakharov, Izabella Grzegory, Ralf Nyholm, Sarah Bernardis, L. Colakerol, Kevin E. Smith, Theodore D. Moustakas, Sylwester Porowski, Tadek Suski, Per Anders Glans, I. Friel, T. Learmonth
Publikováno v:
Solid State Communications. 136:191-195
Photoemission spectra recorded near the Ga 3p photothreshold from GaN have been found to contain satellites of the main Ga 3d emission line. The intensity of these satellites resonate at this threshold, and are associated with a 3d(8) state. The corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5c9e5946a11c84e00b9573addde0a96
https://doi.org/10.1016/j.ssc.2005.07.030
https://doi.org/10.1016/j.ssc.2005.07.030
Autor:
Mike Leszczynski, R. Czernetzki, P. Wisniewski, Sylwester Porowski, Pawel Prystawko, Tadeusz Suski, Izabella Grzegory, Lucy Gorczyca, Piotr Perlin, Marcin Zielinski, Grzegorz Targowski
Publikováno v:
Journal of Crystal Growth. 272:274-277
High-pressure-grown bulk GaN crystals have the best reported structural quality and the lowest defect density among all available GaN substrates. We report on MOVPE growth, device processing and properties of high-power laser structures on such subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cee626947636b577ec97a8ad6d4cab11
https://doi.org/10.1016/j.jcrysgro.2004.08.098
https://doi.org/10.1016/j.jcrysgro.2004.08.098
Autor:
Sylwester Porowski, Mike Leszczynski, P. Wisniewski, Tadek Suski, Elzbieta Litwin-Staszewska, Izabella Grzegory, Piotr Perlin, L. H. Dmowski, Szymon Grzanka, Czeslaw Skierbiszewski, Pawel Prystawko, M. Boćkowski, M. Krysko, Marcin Sarzyński, Grzegorz Nowak, A. Libura, R. Czernetzki
Publikováno v:
physica status solidi (a). 200:9-12
GaN single crystals exhibiting the lowest dislocation density (below 100/cm 2 ) are grown at high hydrostatic N 2 pressures of 10-20 kbar. Despite small dimensions of such crystals (up to 1/2) they offer a unique chance to construct high power laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5518dfb677b72652889559824b80e1c9
https://doi.org/10.1002/pssa.200303293
https://doi.org/10.1002/pssa.200303293
Autor:
Tadeusz Suski, Izabella Grzegory, W Lojkowski, Stanislaw Krukowski, W Jager, D Kolesnikov, Sylwester Porowski, V Jager, V Bogdanov
Publikováno v:
Journal of Physics: Condensed Matter. 14:11097-11110
Gallium nitride, aluminum nitride and indium nitride are basic materials for blue optoelectronic devices. The essential part of the technology of these devices is annealing at high temperatures. Thermodynamic properties of the Ga–N system and their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500d0a2ade193e620560dd249ccc78aa
https://doi.org/10.1088/0953-8984/14/44/433
https://doi.org/10.1088/0953-8984/14/44/433