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Autor:
Jennifer Fullam, Wei Ti Lee, Bing Sun, Srinivasan Rangarajan, Saiqa Farhat, Ying Wang, Mike Kwan, Mark Klare, Heath Pois, Nicolas Loubet, Qing Liu, Sylvian Maitrejean, Tom Larson, B. Lherron, Romain Wacquez, John G. Gaudiello
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a931f34e01a4b9e7daa7d2f49e9524b
https://doi.org/10.1109/asmc.2014.6846971
https://doi.org/10.1109/asmc.2014.6846971
