Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sylvan Brocard"'
Autor:
Sarvenaz Keshmiri, Gaëtan Lemaire, Sylvan Brocard, Camille Verry, Yacine Bencheikh, Samy Kefs, Laura Eling, Raphaël Serduc, Jean-François Adam
Publikováno v:
Physics and Imaging in Radiation Oncology, Vol 30, Iss , Pp 100565- (2024)
Background and Purpose: Microbeam Radiation Therapy (MRT) aims to deliver higher doses to the target while minimizing radiation damage to healthy tissues using synchrotron x-ray microbeams. Translational MRT research has now started, driven by promis
Externí odkaz:
https://doaj.org/article/7cb4191bf72b42429bf04ab16a411b56
Autor:
Marco G. Pala, Sylvan Brocard
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 115-121 (2015)
This paper presents full-quantum 3-D simulations predicting the electrical performance of nanowire tunnel-FETs based on III-V hetero-junctions. Our calculations exploit an eight-band k·p Hamiltonian within the nonequilibrium Green's functions formal
Externí odkaz:
https://doaj.org/article/35bb6103ea394421945c6d66ebb92cc2
Publikováno v:
Medical Physics
Medical Physics, 2022, 49 (6), pp.3999-4017. ⟨10.1002/mp.15637⟩
Medical Physics, 2022, 49 (6), pp.3999-4017. ⟨10.1002/mp.15637⟩
International audience; BackgroundMicrobeam radiation therapy (MRT) is a treatment modality based on spatial fractionation of synchrotron generated x-rays into parallel, high dose, microbeams of a few microns width. MRT is still an under-development
Autor:
Sylvan Brocard, Marco G. Pala
Publikováno v:
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩
IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2015, 3 (3), pp.115-121. ⟨10.1109/JEDS.2015.2395719⟩
This paper presents full-quantum 3-D simulations predicting the electrical performance of nanowire tunnel-FETs based on III–V hetero-junctions. Our calculations exploit an eight-band $\mathrm {k}\cdot \mathrm {p}$ Hamiltonian within the nonequilibr
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2014, 35 (2), pp.184-186. ⟨10.1109/LED.2013.2295884⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2014, 35 (2), pp.184-186. ⟨10.1109/LED.2013.2295884⟩
International audience; We propose to employ a grading of the molar fraction in the source region of III-V hetero-junction tunnel-FETs as a means to improve the on-current without degrading the subthreshold swing. Our full quantum simulations show th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7fecf1dab2eb9ab4fffd502c90dfd46
https://hal.archives-ouvertes.fr/hal-01002251
https://hal.archives-ouvertes.fr/hal-01002251
Publikováno v:
2013 IEEE International Electron Devices Meeting.
This work presents a systematic design study of nanowire Tunnel-FETs at LG=17nm employing a 3D Poisson-NEGF solver based on a 8×8 k·p Hamiltonian and including phonon scattering. In particular: (a) we revisit the design of GaSb-InAs based hetero-ju