Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Sylvain Maitrejean"'
Autor:
Sylvain Maitrejean, G. Besnard, Walter Schwarzenbach, Christophe Maleville, Shay Reboh, Aymen Ghorbel, Bich-Yen Nguyen, Virginie Loup, Laurent Brunet, Frédéric Mazen, Gweltaz Gaudin
Publikováno v:
ECS Transactions. 97:129-133
Abstract— To support 3D Sequential integration with a cost-effective layer transfer, SmartCut™ process at low temperature (below 500 °C) is proposed. Excellent SOI & BOX layer thickness uniformities are demonstrated, while layer integrity, elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39b0f14ff99b5333064e3ed1720b317b
https://doi.org/10.1149/09705.0129ecst
https://doi.org/10.1149/09705.0129ecst
Autor:
Bruno Ghyselen, Christelle Navone, Muriel Martinez, Loic Sanchez, Christophe Lecouvey, Brigitte Montmayeul, Florence Servant, Sylvain Maitrejean, Ionut Radu
Publikováno v:
physica status solidi (a). 219:2270010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b60be6aa50f1736a7e057fe39a469824
https://doi.org/10.1002/pssa.202270010
https://doi.org/10.1002/pssa.202270010
Autor:
Rami Khazaka, Y. Bogumilowicz, Bernard Previtali, Sylvain David, Denis Rouchon, Nicolas Chevalier, Sylvain Maitrejean, Zdenek Chalupa, Hervé Boutry, Anne Marie Papon, V. Lapras
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, Elsevier, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
In this contribution, we report on the growth of Ge inside extremely thin 16-nm thick cavities through selective lateral growth of Ge on 300 mm silicon-on-insulator (0 0 1) substrates. We showed that the density of defects depends on the cavity shape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4466803858aeb20876c6e277df144280
https://doi.org/10.1016/j.apsusc.2018.03.104
https://doi.org/10.1016/j.apsusc.2018.03.104
Autor:
Olivier Faynot, S. Barraud, Tenko Yamashita, Barbara De Salvo, Pierre Morin, Emmanuel Augendre, Joël Schmitt, R. Coquand, B. Lherron, Qing Liu, Phuong Nguyen, Sylvain Maitrejean, Nicolas Loubet, Louis Hutin, Rajasekhar Venigalla, Shay Reboh, Maud Vinet, Bruce B. Doris
Publikováno v:
ECS Transactions. 75:505-512
1. Introduction Depleted body devices such as FinFETs and Ultra-Thin Body and Buried oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI) MOSFETs have emerged as architectures of choice for technology nodes where conventional planar bulk devices do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b6ef3cc076de306528367f2b8b2d678
https://doi.org/10.1149/07508.0505ecst
https://doi.org/10.1149/07508.0505ecst
Autor:
Hervé Boutry, A.M. Papon, H. Dansas, Zdenek Chalupa, V. Lapras, Bernard Previtali, Sylvain Maitrejean, Y. Bogumilowicz, Rami Khazaka
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
In this contribution, we report on the growth of horizontal Ge nanowires inside extremely thin tunnels surrounded by oxide. This is achieved through selective lateral growth of Ge on silicon-on-insulator (001) substrates. The 16 nm high tunnels are f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::985451bb6dfb3d1937b66c2574336ac8
https://cea.hal.science/cea-02185226
https://cea.hal.science/cea-02185226
Autor:
C. Scibetta, S. Beaurepaire, F. Fournel, A. Roman, S. Chevalliez, C. Fenouillet-Beranger, X. Garros, Xavier Federspiel, J. Aubin, V. Larrey, Perrine Batude, F. Kouemeni-Tchouake, F. Ponthenier, J-B. Pin, Daniel Scevola, Lucile Arnaud, F. Aussenac, C. Guerin, P. Acosta-Alba, V. Mazzocchi, Sebastien Kerdiles, H. Fontaine, Shay Reboh, P. Perreau, Sylvain Maitrejean, Laurent Brunet, N. Rambal, M. Vinet, Pascal Besson, Christophe Morales, T. Lardin, V. Balan, Vincent Jousseaume, D. Ney, F. Mazen, Francois Andrieu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
The 3D sequential integration, of active devices requires to limit the thermal budget of top tier processing to low temperature (LT) (i.e. $\mathrm{T}_{\text{TOP}}=500^{\circ}\mathrm{C})$ in order to ensure the stability of the bottom devices. Here w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::206d35153ba5f44ca9aa06493e9c2b57
Autor:
Pierre Morin, E. Augendre, C. Le Royer, Joel Kanyandekwe, N. Bernier, Y. Morand, B. Lherron, L. Grenouillet, Oliver Faynot, J. M. Hartmann, M. Celik, James Chingwei Li, Sylvain Maitrejean, B. De Salvo, F. Chafik, Nicolas Loubet, Hong He, R. Wacquez, S. Reboh, Aomar Halimaoui, Bruce B. Doris, Qing Liu, S. Pilorget, A. Bonnevialle
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:P376-P381
Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration S. Maitrejean,a,z N. Loubet,b E. Augendre,a P. Morin,b S. Reboh,c N. Bernier,c R. Wacquez,a B. Lherron,b A. Bonnevialle,c,d Q. Liu,b J. M. Ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb79e1fac95c8554790af791fb631b31
https://doi.org/10.1149/2.0171509jss
https://doi.org/10.1149/2.0171509jss
Autor:
Sylvain Maitrejean, Andrew Price, Steve Burgess, Stéphane Minoret, Fabien Piallat, Chris Jones, Thierry Mourier, Yun Zhou, Sabrina Fadloun, Daniel Mathiot, Larissa Djomeni
Publikováno v:
Microelectronic Engineering. 120:127-132
This article is related to the development of a new low temperature CVD titanium nitride deposition process for the formation of a copper diffusion barrier in 3D TSV integration, using a metalorganic precursor and NH 3 . The physicochemical propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af5c7d326ce45ff99bbb48cc64eae7a
https://doi.org/10.1016/j.mee.2013.11.010
https://doi.org/10.1016/j.mee.2013.11.010
Autor:
Athanasios Kiouseloglou, Sylvain Maitrejean, Fabien Clermidy, Luca Perniola, Gilles Reimbold, Guido Torelli, Alessandro Cabrini, Barbara De Salvo, A. Persico, Gabriele Navarro, A. Roule, Veronique Sousa
Publikováno v:
IEEE Transactions on Electron Devices. 61:1246-1254
In this paper, we examine the problem of the drift of the low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge2Sb2Te5. A novel procedure, named R-SET technique, is proposed to boost the SET speed of these i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f20687951b11488f39977c95318138
https://doi.org/10.1109/ted.2014.2310497
https://doi.org/10.1109/ted.2014.2310497
Autor:
A. Roule, Veronique Sousa, Sylvain Maitrejean, Paola Zuliani, A. Toffoli, A. Persico, L. Perniola, N. Pashkov, J.C. Bastien, G. Navarro, B. De Salvo, Roberto Annunziata
Publikováno v:
Solid-State Electronics. 89:93-100
In this paper we provide a detailed physical and electrical characterization of Germanium Telluride compounds (Ge x Te 100−x ) targeting phase-change memory applications. Thin films of Germanium-rich as well as Tellurium-rich phase-change materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb323ac338b2c18f36431d0d4b351b35
https://doi.org/10.1016/j.sse.2013.07.005
https://doi.org/10.1016/j.sse.2013.07.005