Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Sylvain Leconte"'
Autor:
G. Pozzovivo, Martin Albrecht, T. Remmele, Eva Monroy, S. Golka, Gottfried Strasser, Sylvain Leconte
Publikováno v:
physica status solidi c. 5:431-434
We have investigated the vertical electronic transport in AlN/GaN/AlN double barrier structures grown by plasma-assisted molecular-beam epitaxy, with AlN barrier thickness of 0.5 nm and a GaN well thickness varying from 0.5 nm to 2 nm. Two different
Autor:
François H. Julien, Laurent Nevou, Esther Baumann, Fabien Guillot, Fabrizio R. Giorgetta, Eva Monroy, Daniel Hofstetter, Maria Tchernycheva, Laetitia Doyennette, Sylvain Leconte
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:821-827
In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quan- tum well and quantum dot superlatt
Autor:
Fabrizio R. Giorgetta, Eva Monroy, Esther Baumann, Edith Bellet-Amalric, Fabien Guillot, Sylvain Leconte, Daniel Hofstetter
Publikováno v:
physica status solidi c. 4:1621-1624
We report on a prototype electro-optical modulator at telecommunication wavelength based on intersubband (ISB) transitions in a short-period GaN/AlN superlattice (SL). The device has a vertical architecture resembling a nitride-based high-electron mo
Autor:
Esther Baumann, Fabrizio R. Giorgetta, Laurent Nevou, Martin Albrecht, L. Doyennette, Maria Tchernycheva, T. Remmele, Edith Bellet-Amalric, Sylvain Leconte, Fabien Guillot, F. H. Julien, Eva Monroy, Daniel Hofstetter
Publikováno v:
Superlattices and Microstructures. 40:418-425
In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integ
Publikováno v:
Superlattices and Microstructures. 40:507-512
In this work, we investigate the electronic structure and vertical electron transport through GaN/AlN/GaN single-barrier structures with different AlN thickness, grown by plasma-assisted molecular beam epitaxy. Conductive and capacitive characterizat
Autor:
Maria Tchernycheva, Laurent Nevou, Eva Monroy, Martin Albrecht, L. Doyennette, F. H. Julien, Fabien Guillot, T. Remmele, Sylvain Leconte, Raffaele Colombelli, E. Warde
Publikováno v:
Superlattices and Microstructures. 40:412-417
We present a systematic investigation of ultrathin single and coupled GaN/AlN quantum wells grown by molecular beam epitaxy for applications to unipolar devices. Narrow Lorentzian-shaped intersubband absorptions are demonstrated tunable at telecommun
Publikováno v:
Microelectronics Journal. 40:339-341
In this work, we study electronic and conduction properties of a single AlN barrier (thickness from 0.5 to 5nm) embedded in GaN. The electronic structure was simulated using a self-consistent Schrodinger-Poisson solver, and verified by photoluminesce
Autor:
Daniel Hofstetter, Esther Baumann, Sylvain Leconte, Eva Monroy, Edith Bellet-Amalric, Fabien Guillot, Fabrizio R. Giorgetta
The authors report on electromodulated intersubband (ISB) absorption experiments on AlN/GaN superlattices (SLs) grown on a transistorlike structure. A sample containing five SL periods shows two distinct absorption peaks related to ISB transitions in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6ee6c0f20a14d325dd068e71aac4ce2
http://doc.rero.ch/record/9214/files/Baumann_Esther_-_Electrically_adjustable_intersubband_absorption_20080430.pdf
http://doc.rero.ch/record/9214/files/Baumann_Esther_-_Electrically_adjustable_intersubband_absorption_20080430.pdf
Autor:
Esther Baumann, Edith Bellet-Amalric, Fabien Guillot, Daniel Hofstetter, Eva Monroy, Sylvain Leconte, Fabrizio R. Giorgetta
Publikováno v:
AIP Conference Proceedings.
We report on a prototype 1.55 μm electro‐optical modulator based on intersubband transitions in a short‐period GaN/AlN superlattice. The device has a vertical architecture resembling a nitride‐based high‐electron mobility transistor, whose b
Publikováno v:
AIP Conference Proceedings.
In this work we investigate the charge distribution and vertical electron transport through GaN/AlN/GaN single‐barrier structures with different AlN thickness. The results of electrical characterization are interpreted by comparison with simulation