Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sylvain Finot"'
Autor:
Lucie Valera, Vincent Grenier, Sylvain Finot, Catherine Bougerol, Joël Eymery, Gwénolé Jacopin, Christophe Durand
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2023, 122 (14), pp.141101. ⟨10.1063/5.0141568⟩
Applied Physics Letters, 2023, 122 (14), pp.141101. ⟨10.1063/5.0141568⟩
International audience; The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five periods of two monolayer-thick layers of GaN and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06e4d1e997a1aebeb0ad771a3fb14a98
https://cea.hal.science/cea-04058472
https://cea.hal.science/cea-04058472
Publikováno v:
Microscopy and Microanalysis
Microscopy and Microanalysis, 2022, 28 (S1), pp.2012-2013. ⟨10.1017/S1431927622007814⟩
Microscopy and Microanalysis, 2022, 28 (S1), pp.2012-2013. ⟨10.1017/S1431927622007814⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e03385ab929866c13ccf46c2f5cbe6b
https://hal.science/hal-04149843
https://hal.science/hal-04149843
Autor:
Christophe Durand, Gwénolé Jacopin, Bruno Gayral, Vincent Grenier, Joël Eymery, Sylvain Finot, Catherine Bougerol
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2021, 21 (11), pp.6504-6511. ⟨10.1021/acs.cgd.1c00943⟩
Crystal Growth & Design, 2021, 21 (11), pp.6504-6511. ⟨10.1021/acs.cgd.1c00943⟩
Crystal Growth & Design, American Chemical Society, 2021, 21 (11), pp.6504-6511. ⟨10.1021/acs.cgd.1c00943⟩
Crystal Growth & Design, 2021, 21 (11), pp.6504-6511. ⟨10.1021/acs.cgd.1c00943⟩
Strain relaxation of nonpolar GaN/Al0.6Ga0.4N multiple quantum wells grown in core–shell geometry by metal–organic vapor-phase epitaxy on GaN wires is investigated. Cracking along the a-direction i...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0c01ecd61d3cc9bc65f0992ab2e5500
https://hal.archives-ouvertes.fr/hal-03379668/document
https://hal.archives-ouvertes.fr/hal-03379668/document
Publikováno v:
ACS photonics
ACS photonics, American Chemical Society, In press, ⟨10.1021/acsphotonics.1c01339⟩
ACS photonics, 2021, 9 (1), pp.173-178. ⟨10.1021/acsphotonics.1c01339⟩
ACS photonics, American Chemical Society, In press, ⟨10.1021/acsphotonics.1c01339⟩
ACS photonics, 2021, 9 (1), pp.173-178. ⟨10.1021/acsphotonics.1c01339⟩
International audience; III-nitride micro-LEDs are promising building blocks for the next generation of high performance micro-displays. To reach a high pixel density, it is desired to achieve micro-LEDs with lateral dimensions below 10 µm. With suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26d6cc9677cf4646b3b059c0fd30c8e2
https://hal.archives-ouvertes.fr/hal-03469521/file/Main.pdf
https://hal.archives-ouvertes.fr/hal-03469521/file/Main.pdf
Autor:
Nicolas Mollard, Joël Eymery, Gwénolé Jacopin, Eric Robin, Vincent Grenier, Bruno Gayral, Christophe Durand, Eva Monroy, Catherine Bougerol, Sylvain Finot
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (39), pp.44007-44016. ⟨10.1021/acsami.0c08765⟩
ACS Applied Materials & Interfaces, 2020, 12 (39), pp.44007-44016. ⟨10.1021/acsami.0c08765⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (39), pp.44007-44016. ⟨10.1021/acsami.0c08765⟩
ACS Applied Materials & Interfaces, 2020, 12 (39), pp.44007-44016. ⟨10.1021/acsami.0c08765⟩
International audience; The present work reports high-quality nonpolar GaN/Al0.6Ga0.4N multiple quantum wells (MQWs) grown in core−shell geometry by metal−organic vapor-phase epitaxy on them-plane sidewalls ofc̅-oriented hexagonal GaN wires. Opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac181fd47f68529e7489dc0ac909b3a5
https://hal-cea.archives-ouvertes.fr/cea-02963131/document
https://hal-cea.archives-ouvertes.fr/cea-02963131/document
Autor:
Vincent, Grenier, Sylvain, Finot, Gwénolé, Jacopin, Catherine, Bougerol, Eric, Robin, Nicolas, Mollard, Bruno, Gayral, Eva, Monroy, Joël, Eymery, Christophe, Durand
Publikováno v:
ACS applied materialsinterfaces. 12(39)
The present work reports high-quality nonpolar GaN/Al
Autor:
Akanksha, Kapoor, Sylvain, Finot, Vincent, Grenier, Eric, Robin, Catherine, Bougerol, Joel, Bleuse, Gwénolé, Jacopin, Joël, Eymery, Christophe, Durand
Publikováno v:
ACS applied materialsinterfaces. 12(16)
Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of
Autor:
Akanksha Kapoor, Joël Bleuse, Catherine Bougerol, Gwénolé Jacopin, Vincent Grenier, Eric Robin, Christophe Durand, Sylvain Finot, Joël Eymery
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (16), pp.19092-19101. ⟨10.1021/acsami.9b19314⟩
ACS Applied Materials & Interfaces, 2020, 12 (16), pp.19092-19101. ⟨10.1021/acsami.9b19314⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (16), pp.19092-19101. ⟨10.1021/acsami.9b19314⟩
ACS Applied Materials & Interfaces, 2020, 12 (16), pp.19092-19101. ⟨10.1021/acsami.9b19314⟩
Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of c-plane InGaN/GaN-based light-emitting diodes (LEDs). The present work investigates the role of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19351ab52d4f2cb930d5de1d048ffe42
https://hal-cea.archives-ouvertes.fr/cea-02540566/document
https://hal-cea.archives-ouvertes.fr/cea-02540566/document
Autor:
Pietro Pampili, Catherine Bougerol, Joël Eymery, Vitaly Z. Zubialevich, Gwénolé Jacopin, Sylvain Finot, Peter J. Parbrook, Christophe Durand, Vincent Grenier
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2020, 117 (22), pp.221105. ⟨10.1063/5.0023545⟩
Applied Physics Letters, American Institute of Physics, 2020, 117 (22), pp.221105. ⟨10.1063/5.0023545⟩
Applied Physics Letters, 2020, 117 (22), pp.221105. ⟨10.1063/5.0023545⟩
Applied Physics Letters, American Institute of Physics, 2020, 117 (22), pp.221105. ⟨10.1063/5.0023545⟩
International audience; Relaxation of tensile strain in AlGaN heterostructures grown on GaN template can lead to the formation ofcracks. These extended defects locally degrade the crystal quality resulting in a local increase of non-radiativerecombin