Zobrazeno 1 - 10 of 25 pro vyhledávání: '"Sydney G. Slater"'
1
Advances in Resist Materials for 193 nm Lithography
Autor: Thomas Steinhausler, Murrae J. Bowden, Patrick Foster, Allen G. Timko, John J. Biafore, Gregory Spaziano, Richard S. Hutton, F. M. Houlihan, Ilya L. Rushkin, Allen H. Gabor, Sydney G. Slater, Elsa Reichmanis, Gary Dabbagh, James R. Sweeney, Ognian N. Dimov, Mark Neisser, Om Nalamasu, R. Cirelli, Arturo N. Medina, Andrew J. Blakeney
Publikováno v: Journal of Photopolymer Science and Technology. 12:423-432
The performance of a 193nm single layer resist based on a norbornene-malefic anhydride matrix resin has been optimized through a series of statistical design experiments. The SDE demonstrated the importance of setting the PEB temperature above the SB
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df25572160e8e9145f2d571789152bfa
https://doi.org/10.2494/photopolymer.12.423
Zobrazit plný text záznamu
2
Lithographic performance of 193 nm single and bi-layer materials
Autor: Thomas Steinhausler, T. Sugihara, Janet M. Kometani, Andrew J. Blakeney, F. Van Roey, Sydney G. Slater, V. van Driessche, Plamen Tzviatkov, John J. Biafore, Anne-Marie Goethals, Allen G. Timko, R. Cirelli, Arturo N. Medina, F. M. Houlihan, Ingrid Pollers, Omkaram Nalamasu, Kurt G. Ronse, Allen H. Gabor
Publikováno v: Journal of Photopolymer Science and Technology. 11:513-523
For 193nm lithography several resist options are available such as single layer in combination with anti-reflective layers, bi-layer and top surface imaging. Single layer resist materials are preferred by the industry because of their limited complex
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24ad5d5bfa889bf60fc4e4de25790118
https://doi.org/10.2494/photopolymer.11.513
Zobrazit plný text záznamu
4
A unified approach to resists materials design for the advanced lithographic technologies
Autor: Omkaram Nalamasu, R. G. Tarascon, Allen G. Timko, Anthony E. Novembre, P. Falcigno, Sydney G. Slater, N. Münzel, H. Holzwarth, Elsa Reichmanis
Publikováno v: Microelectronic Engineering. 27:367-370
New resist materials and processes are necessary to pattern @? 0.25 @mm design rule circuits with advanced deep-UV, X-ray and e-beam lithographic technologies. Chemically amplified positive resist systems introduced to meet the high sensitivity and r
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fea7e9dc5f20a327c03c18da502bf906
https://doi.org/10.1016/0167-9317(94)00125-e
Zobrazit plný text záznamu
5
Second-generation 193-nm bilayer resist
Autor: Patrick Foster, Andrew J. Blakeney, Sydney G. Slater, Thomas Steinhaeusler, Gregory Spaziano, John J. Biafore
Publikováno v: SPIE Proceedings.
We have recently developed a bilayer resist system based on a methacrylic silicon-containing imageable layer and a UV curable copolymer undercoat which has exhibited 0.13 micrometers resolution for dense features and 0.12 micrometers resolution for i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd2a3db1f7c05f8ae838b1a5cf16a520
https://doi.org/10.1117/12.350153
Zobrazit plný text záznamu
6
New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins
Autor: Sydney G. Slater, Richard S. Hutton, Arturo N. Medina, Ilya L. Rushkin, Omkaram Nalamasu, Mark Neisser, Allen H. Gabor, Francis M. Houlihan, Elsa Reichmanis, Janet M. Kometani, Allen G. Timko
Publikováno v: SPIE Proceedings.
A series of new polymers for 193 nm single layer resist based on maleic anhydride/cycloolefin systems with minimum amount of acrylate units were synthesized. In order to minimize the acrylate content, the cycloolefin moiety of the polymers was functi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2efabdb4900b9b020979734374aa82b8
https://doi.org/10.1117/12.350241
Zobrazit plný text záznamu
7
Optimization of 193-nm single-layer resists through statistical design
Autor: Omkaram Nalamasu, Raymond A. Cirelli, James R. Sweeney, Sydney G. Slater, Richard S. Hutton, Gary Dabbagh, Elsa Reichmanis, Francis M. Houlihan, Ilya L. Rushkin, Allen H. Gabor, Allen G. Timko, Ruey H. Wang, Mark Neisser, Arturo N. Medina, Ognian N. Dimov
Publikováno v: SPIE Proceedings.
Through a series of statistical design experiments we optimized the lithographic performance of a 193 nm single layer resists based on a norbornene-maleic anhydride matrix resin. Several interesting findings were found including that having the PEB t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee20703e23287b49a9dc3c7a7e0a1bae
https://doi.org/10.1117/12.350205
Zobrazit plný text záznamu
8
193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids
Autor: Allen H. Gabor, Elsa Reichmanis, John J. Biafore, Sydney G. Slater, Arturo N. Medina, Omkaram Nalamasu, Francis M. Houlihan, Richard S. Hutton, Janet M. Kometani, Raymond A. Cirelli, Allen G. Timko
Publikováno v: SPIE Proceedings.
Single layer resists for 193 nm based upon resins derived from alternating copolymers of cycloolefins and maleic anhydride will be discussed. Our past work has examined the effect of polymer structure and composition, dissolution inhibitor structure
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b37f0d26f63be5eee730c9b786420198
https://doi.org/10.1117/12.312462
Zobrazit plný text záznamu
9
Structural design of ketal and acetal blocking groups in two-component chemically amplified positive DUV resists
Autor: Omkaram Nalamasu, Reinhard Schulz, Hans-Thomas Schacht, Ottmar Dr. Rohde, Pasquale Alfred Falcigno, Carlo Mertesdorf, Heinz Holzwarth, David Frey, Allen G. Timko, Norbert Muenzel, Sydney G. Slater, Thomas X. Neenan
Publikováno v: SPIE Proceedings.
In the present study, protecting groups of moderate stability, such as acetals and ketals, were investigated as pendant blocking groups in polyvinyl phenols. Polymers were obtained by reacting enol ethers with the phenolic side groups to form acetal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0aad5ed02d375712e5a40b13cdc78e33
https://doi.org/10.1117/12.210382
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje