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Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::ddee3d5b9fbc95194fa1c8ea2a61c3fd
http://dspace.nbuv.gov.ua/handle/123456789/121591
http://dspace.nbuv.gov.ua/handle/123456789/121591