NbOx based memristor as artificial synapse emulating short term plasticity

Autor: Sweety Deswal, Ashok Kumar, Ajeet Kumar

Publikováno v: AIP Advances, Vol 9, Iss 9, Pp 095022-095022-5 (2019)

Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse lik

Externí odkaz: https://doaj.org/article/88b291b7090240419d0e099d3d3178f1

Printed synaptic transistor–based electronic skin for robots to feel and learn

Autor: Fengyuan Liu, Sweety Deswal, Adamos Christou, Mahdieh Shojaei Baghini, Radu Chirila, Dhayalan Shakthivel, Moupali Chakraborty, Ravinder Dahiya

An electronic skin (e-skin) for the next generation of robots is expected to have biological skin-like multimodal sensing, signal encoding, and preprocessing. To this end, it is imperative to have high-quality, uniformly responding electronic devices

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd957c6222958a0c18e492aec07300e2
https://zenodo.org/record/7032526

Flexible and ultra-fast bioresorbable nanofibers of silk fibroin-PVA composite

Autor: Sweety Deswal, Siva Rama Krishna Vanjari, Ravinder Dahiya, Bhavani Prasad Yalagala

Publikováno v: 2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS).

Electronic devices capable of easily degradable, physically destructible, and bioresorbable which are prepared using abundant and natural biomaterials has been an interesting research topic. These transient electronic devices help in the reduction of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c18b8c575cfefbfcb44e3fbf1289cd74
https://doi.org/10.1109/fleps51544.2021.9469701

NbOx based memristor as artificial synapse emulating short term plasticity

Autor: Ajeet Kumar, Ashok Kumar, Sweety Deswal

Publikováno v: AIP Advances, Vol 9, Iss 9, Pp 095022-095022-5 (2019)

Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting synapse lik

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e04411d1c6e05f49ee6a95542b640561
http://arxiv.org/abs/1910.00260

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

Autor: Carlo Ricciardi, Monica Santamaria, Anouk Goossens, Y. Gonzalez-Velo, Daniele Ielmini, Alexandra I. Berg, Sherif Ibrahim, Alexander L. Shluger, Ludovic Goux, Hans Hilgenkamp, Cina Foroutan-Nejad, Sweety Deswal, Vikas Rana, Rainer Waser, Yang Li, Tsuyoshi Hasegawa, Ilia Valov, Masa-aki Haga, Dirk Wouters, Asal Kiazadeh, Ella Gale, Niloufar Raeishosseini, Geoffrey W. Burr, Gabriela P. Kissling, Jonas Deuermeier, Anthony J. Kenyon, Stefano Brivio, Yuchao Yang, Michael N. Kozicki, Themis Prodromakis, Sayani Majumdar, Philip N. Bartlett, Gianluca Milano, Ruomeng Huang, Elia Ambrosi, R. Stanley Williams, Andrea Zaffora, Vladimir Kolosov

Publikováno v: Ambrosi, E, Bartlett, P, Berg, S, Brivio, S, Burr, G, Deswal, S, Deuermeier, J, Haga, M, Kiazadeh, A, Kissling, G, Kozicki, M, Foroutan-Nejad, C, Gale, E, Gonzalez-Velo, Y, Goossens, A, Goux, L, Hasegawa, T, Hilgenkamp, H, Huang, R, Ibrahim, S, Ielmini, D, Kenyon, T, Kolosov, V, Li, Y, Majumdar, S, Milano, G, Prodromakis, T, Raeishosseini, N, Rana, V, Ricciardi, C, Santamaria, M, Shluger, A, Valov, I, Waser, R, Williams, S, Wouters, D, Yang, Y & Zaffora, A 2019, ' Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion ', Faraday Discussions, vol. 213, pp. 115-150 . https://doi.org/10.1039/C8FD90059K
Faraday discussions, 213, 115-150. Royal Society of Chemistry
Ambrosi, E, Bartlett, P, Berg, A I, Brivio, S, Burr, G, Deswal, S, Deuermeier, J, Haga, M A, Kiazadeh, A, Kissling, G, Kozicki, M, Foroutan-Nejad, C, Gale, E, Gonzalez-Velo, Y, Goossens, A, Goux, L, Hasegawa, T, Hilgenkamp, H, Huang, R, Ibrahim, S, Ielmini, D, Kenyon, A J, Kolosov, V, Li, Y, Majumdar, S, Milano, G, Prodromakis, T, Raeishosseini, N, Rana, V, Ricciardi, C, Santamaria, M, Shluger, A, Valov, I, Waser, R, Stanley Williams, R, Wouters, D, Yang, Y & Zaffora, A 2019, ' Electrochemical metallization ReRAMs (ECM)-Experiments and modelling : General discussion ', Faraday Discussions, vol. 213, pp. 115-150 . https://doi.org/10.1039/c8fd90059k

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8cab8126ce4e7095479b06bb0907c9c
https://orbit.dtu.dk/en/publications/40a1f3e0-a285-4b5b-9d92-3e43ba9d8c22