Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Swaminathan T. Srinivasan"'
Autor:
Swaminathan T. Srinivasan, Eric Armour, Bumjoon Kim, Wei Chan, Scott Maxwell, Bojan Mitrovic, Jay Montgomery, Sandeep Krishnan, Earl Marcelo, Drew Hanser
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVI.
Autor:
Eric A. Armour, S. D. Hersee, Swaminathan T. Srinivasan, S. Z. Sun, Graciela R. Guel, Kevin J. Malloy
Publikováno v:
Journal of Electronic Materials. 21:1051-1056
The effects of surface preparation usinginsitu HCl etching and (NH4)2S passivation of AlxGa1-xAs episurfaces prior to regrowth by MOCVD are analyzed by deep level transient spectroscopy (DLTS), electrochemical profiling (C-V) and room-temperature pho
Autor:
Michael S. Allen, Salvador Guel-Sandoval, Alan H. Paxton, John G. McInerney, David J. Gallant, Gregory C. Dente, Stephen D. Hersee, Swaminathan T. Srinivasan, Charles E. Moeller, S. Z. Sun
Publikováno v:
Applied Physics Letters. 66:2048-2050
We describe a novel high power semiconductor laser that employs a shaped unstable resonator waveguide to maintain fundamental spatial mode operation at high power levels. We call this device the SHUR (shaped unstable resonator) laser. By photoetching
Autor:
John G. McInerney, Christian F. Schaus, Swaminathan T. Srinivasan, David J. Gallant, Eric A. Armour, Alan H. Paxton, S. Z. Sun, Stephen D. Hersee
Publikováno v:
Applied Physics Letters. 61:1272-1274
We have obtained high‐power spatially coherent operation in wide‐stripe InGaAs/GaAs/AlGaAs semiconductor lasers using a monolithic unstable resonator [consisting of diverging lens elements incorporated above an asymmetric graded‐index separate
Autor:
Swaminathan T. Srinivasan, Salvador Guel-Sandoval, David J. Gallant, Stephen D. Hersee, Alan H. Paxton
Publikováno v:
Physics and Simulation of Optoelectronic Devices II.
Data from regrown-lens-train lasers are used to validate a computer program for their simulation. Curves of light output as a function of current have been calculated and compare well with experimental data taken for three lasers with widely varying
Autor:
Charles E. Moeller, Christian F. Schaus, Eric A. Armour, Shang Zhu Sun, David J. Gallant, Alan H. Paxton, Swaminathan T. Srinivasan
Publikováno v:
Laser Diode Technology and Applications IV.
We have obtained high power single-lateral-mode operation in wide-stripe InGaAs/GaAs/A1GaAs semiconductor lasers using a monolithic unstable resonator (consisting of diverging elements incorporated above an asymmetric GRIN-SCH). The fabrication invol
Publikováno v:
Optical Society of America Annual Meeting.
We previously reported on the performance of wide-stripe semiconductor lasers with etched and regrown lens trains.1 Here, the theory and design rationale are presented. The modes are well approximated by the modes of a continuous unstable resonator w
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