Zobrazeno 1 - 10
of 272
pro vyhledávání: '"Svintsov, A. P."'
Autor:
Titova, Elena I., Kashchenko, Mikhail A., Miakonkikh, Andrey V., Morozov, Alexander D., Domaratskiy, Ivan K., Zhukov, Sergey S., Rumyantsev, Vladimir V., Morozov, Sergey V., Novoselov, Kostya S., Bandurin, Denis A., Svintsov, Dmitry A.
Electrically induced $p-n$ junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap $E_g$. Still, the upper limits of respon
Externí odkaz:
http://arxiv.org/abs/2412.06918
Autor:
Petrov, Aleksandr S., Svintsov, Dmitry
Thermoelectric effects in $p-n$ junctions are widely used for energy generation with thermal gradients, creation of compact Peltier refrigerators and, most recently, for sensitive detection of infrared and terahertz radiation. It is conventionally as
Externí odkaz:
http://arxiv.org/abs/2412.05981
Autor:
Mylnikov, Dmitry A., Kashchenko, Mikhail A., Safonov, Ilya V., Novoselov, Kostya S., Bandurin, Denis A., Chernov, Alexander I., Svintsov, Dmitry A.
Mid-infrared (mid-IR) photodetectors play a crucial role in various applications, including the development of biomimetic vision systems that emulate neuronal function. However, current mid-IR photodetector technologies are limited by their cost and
Externí odkaz:
http://arxiv.org/abs/2412.05977
Autor:
Svintsov, Dmitry, Devizorova, Zhanna
Photon drag represents a mechanism of photocurrent generation wherein the electromagnetic (EM) field momentum is transferred directly to the charge carriers. It is believed to be small by the virtue of low photon momentum compared to the typical mome
Externí odkaz:
http://arxiv.org/abs/2411.14075
Autor:
Semkin, Valentin, Shabanov, Aleksandr, Kapralov, Kirill, Kashchenko, Mikhail, Sobolev, Alexander, Mazurenko, Ilya, Myltsev, Vladislav, Nikulin, Egor, Chernov, Alexander, Kameneva, Ekaterina, Bocharov, Alexey, Svintsov, Dmitry
Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$ junctions. Her
Externí odkaz:
http://arxiv.org/abs/2411.06480
Autor:
Svintsov, Dmitry, Shabanov, Alexander
An exact solution for electromagnetic wave diffraction at the junction of two-dimensional electron systems (2DES) is obtained and analyzed for electric field polarized along the edge. A special emphasis is paid to the metal-contacted and terminated e
Externí odkaz:
http://arxiv.org/abs/2410.20206
Autor:
Moiseenko, Ilia, Mönch, Erwin, Kapralov, Kirill, Bandurin, Denis, Ganichev, Sergey, Svintsov, Dmitry
Recent theoretical studies of carrier-carrier scattering in degenerate two-dimensional systems have revealed radically different relaxation times for odd and even angular harmonics of distribution function. This theoretical concept, dubbed as 'tomogr
Externí odkaz:
http://arxiv.org/abs/2409.05147
Autor:
Kravtsov, M., Shilov, A. L., Yang, Y., Pryadilin, T., Kashchenko, M. A., Popova, O., Titova, M., Voropaev, D., Wang, Y., Shein, K., Gayduchenko, I., Goltsman, G. N., Lukianov, M., Kudriashov, A., Taniguchi, T., Watanabe, K., Svintsov, D. A., Principi, A., Adam, S., Novoselov, K. S., Bandurin, D. A.
Publikováno v:
Nature Nanotechnology (2024)
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances t
Externí odkaz:
http://arxiv.org/abs/2403.18492
Autor:
Mylnikov, Dmitry A., Kashchenko, Mikhail A., Kapralov, Kirill N., Ghazaryan, Davit A., Vdovin, Evgenii E., Morozov, Sergey V., Novoselov, Kostya S., Bandurin, Denis A., Chernov, Alexander I., Svintsov, Dmitry A.
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/gra
Externí odkaz:
http://arxiv.org/abs/2312.05612
Publikováno v:
JETP Letters, vol. 119, p. 136-143 (2024)
The Coulomb drag is a many-body effect observed in proximized low-dimensional systems. It appears as emergence of voltage in one of them upon passage of bias current in another. The magnitude of drag voltage can be strongly affected by exchange of pl
Externí odkaz:
http://arxiv.org/abs/2312.05097