Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Svetlana S. Kormilitsina"'
Autor:
Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 165-171 (2022)
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of
Externí odkaz:
https://doaj.org/article/751bf4f187544ba5a271c72f77da3ae3
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 2, Pp 73-78 (2021)
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches.
Externí odkaz:
https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb041
Autor:
Svetlana S. Kormilitsina, Elena V. Molodtsova, Stanislav N. Knyzev, Roman Yu. Kozlov, Dmitry A. Zavrazhin, Elena V. Zharikova, Yuri V. Syrov
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment
Externí odkaz:
https://doaj.org/article/67bf523b36b24853a97193a5a8f0976d
Autor:
Svetlana S. Kormilitsina, Yu. V. Syrov, E. V. Zharikova, R. Yu. Kozlov, S. N. Knyzev, D. A. Zavrazhin, Elena V. Molodtsova
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:48-56
The method of plane-transverse bending was used to measure the strength of thin single-crystal plates of undoped InSb with a crystallographic orientation of (100). It was found that the strength of the plates (thickness ≤ 800 μm) depends on their
Autor:
Dmitry A. Zavrazhin, Yuri V. Syrov, Elena V. Zharikova, Svetlana S. Kormilitsina, Roman Yu. Kozlov, Stanislav N. Knyzev, Elena V. Molodtsova
Publikováno v:
Modern Electronic Materials 6(4): 147-153
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment