Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Svetlana Radovanov"'
Autor:
Svetlana Radovanov, Svetozar Popovic, M. Rašković, Anne-Marie Valente-Feliciano, Larry Phillips, Leposava Vuskovic, L. Godet
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 569:663-670
Pulsed electric discharges were used to demonstrate the validity of plasma surface treatment of superconducting radio-frequency cavities. The experiments were performed on disc-shaped Nb samples and compared with identical samples treated with buffer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1a81c9124ddd6947b8087fbbe262af
https://doi.org/10.1016/j.nima.2006.09.038
https://doi.org/10.1016/j.nima.2006.09.038
Autor:
Ziwei Fang, Gilles Cartry, Damien Lenoble, A. Grouillet, Ludovic Godet, Bon-Woong Koo, Christophe Cardinaud, Svetlana Radovanov
Publikováno v:
IEEE Transactions on Plasma Science. 32:456-463
As semiconductor devices continue to shrink in size, demands for the formation of ultra-shallow junctions (USJ) are increasing. Pulsed plasma doping (P/sup 2/LAD) has emerged as a scaleable and cost effective solution to dopant delivery, since it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc02975d5b3a1e140b22bc86ad0b0d56
https://doi.org/10.1109/tps.2004.828134
https://doi.org/10.1109/tps.2004.828134
Autor:
Svetlana Radovanov, Antonella Cucchetti, Chris Campbell, Peter L. Kellerman, S. Falk, Frank Sinclair
Publikováno v:
AIP Conference Proceedings.
Recent developments in device architecture and the continuing search for tighter process control have driven the requirement for no energy contamination, high accuracy dose control, more precise angle control and peak dose rate control. The new high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18978b886912706fb331144b1f2c10d5
https://doi.org/10.1063/1.4766547
https://doi.org/10.1063/1.4766547
Autor:
Svetlana Radovanov, John B. Boffard, Shicong Wang, Harold M. Persing, Chun C. Lin, Amy E. Wendt, C. L. Culver
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:021306
Vacuum ultraviolet (VUV) emissions from excited plasma species can play a variety of roles in processing plasmas, including damaging the surface properties of materials used in semiconductor processing. Depending on their wavelength, VUV photons can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34aaeda23a64a61b02eae0112473e4e5
https://doi.org/10.1116/1.4904036
https://doi.org/10.1116/1.4904036
Autor:
Gilles Cartry, Timothy J. Miller, Ludovic Godet, Damien Lenoble, Steven R. Walther, Z. Fang, Christophe Cardinaud, Svetlana Radovanov, Jt Scheuer, F. Lallement, E.A. Arevalo
Publikováno v:
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2006, 24, pp.2391. ⟨10.1116/1.2353841⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2006, 24, pp.2391. ⟨10.1116/1.2353841⟩
International audience; In traditional beamline implantation, the incident ion mass and energy are well known parameters and simulation programs are available to predict the implant profiles. In plasma based ion implantation, all ionized species pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bbf09c50a0b990f4a8150233c2fcc1b
https://hal.archives-ouvertes.fr/hal-00379624/document
https://hal.archives-ouvertes.fr/hal-00379624/document
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
We discuss measurements and modeling associated with the high current ion beam space charge neutralization. We show the importance of the electron temperature in maintaining low beam potential and induced voltage on implanted wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc9a0c9f7940dceb812ea19670cf06d
https://doi.org/10.1109/iit.2000.924218
https://doi.org/10.1109/iit.2000.924218
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
In situ wafer floating potential measurements were made during high current high dose ion implants. Implants were performed on a ribbon beam implanter, the Varian VIISta 80, that uses a plasma flood gun (PFG) for charge control. Real time potential v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f077a4961c5f52e3f13d9a4f650764cd
https://doi.org/10.1109/iit.1999.812157
https://doi.org/10.1109/iit.1999.812157
Autor:
J. Buff, Svetlana Radovanov, Edward W. Bell, W. Edwards, G. Angel, Douglas Brown, J. Cummings, Nicholas R. White, C. Mckenna
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
A high current ion implantation system is described that addresses the needs of the implant community for high beam currents at both high and low energies. The system uses a unique two-magnet design to produce an effectively shortened beam line for p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2966bbcefa56e9e6393304fda67affb
https://doi.org/10.1109/iit.1999.812084
https://doi.org/10.1109/iit.1999.812084
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
This paper investigates performance of a gas-cooled, low temperature electrostatic chuck and the effects of gas injection radius change on the wafer cooling efficiency. Wafer temperature measurements were taken for two new electro-static chuck design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0391fd66ab258e84252d7e0b109fbb03
https://doi.org/10.1109/iit.1999.812196
https://doi.org/10.1109/iit.1999.812196
Autor:
Edward W. Bell, M. Collins, Douglas Brown, J. Cummings, J. Buff, Nicholas R. White, G. Angel, Svetlana Radovanov
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
The VIISta 80 high current ion implanter uses one or two stages of deceleration to produce the requisite high beam currents at low energies. For implantation processes that have a zero tolerance for energy contamination the single stage of decelerati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cd457f663a6a8cd5731fe1767c2208
https://doi.org/10.1109/iit.1999.812091
https://doi.org/10.1109/iit.1999.812091