Zobrazeno 1 - 10
of 219
pro vyhledávání: '"Svetlana, Vitusevich"'
Autor:
Yaroslav Shchur, Houda El Karout, Bouchta Sahraoui, Anatoliy Andrushchak, Guillermo Beltramo, Denys Pustovyi, Svetlana Vitusevich, Patrick Huber, Andriy V. Kityk
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)
Abstract We demonstrate a hybrid nanocomposite combining mesoporous silica, p $$\hbox {SiO}_2$$ SiO 2 , as a host medium and guest lithium niobate $$\hbox {LiNbO}_3$$ LiNbO 3 nanocrystals embedded into tubular silica nanochannels by calcination of th
Externí odkaz:
https://doaj.org/article/85c34f8fb05349689d24103ac79ea682
Autor:
Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract High‐quality liquid gate‐all‐around (LGAA) silicon nanowire (NW) field‐effect transistor (FET) biosensors are fabricated and studied their properties in 1 mm phosphate‐buffered saline solution with pH = 7.4 using transport and nois
Externí odkaz:
https://doaj.org/article/8faa48244ed34deeb01d2bc8e8d40258
Autor:
Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 36, Pp n/a-n/a (2023)
Abstract The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl2 solutions. The critical concent
Externí odkaz:
https://doaj.org/article/9492c1c6cefc4186871fa02f76cca856
Autor:
Mykola Fomin, Francisco. Pasadas, Enrique G. Marin, Alberto Medina‐Rull, Francisco. G. Ruiz, Andrés. Godoy, Ihor Zadorozhnyi, Guillermo Beltramo, Fabian Brings, Svetlana Vitusevich, Andreas Offenhaeusser, Dmitry Kireev
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of graphene‐on‐silicon heterostructures as solution‐gated transistors for bioelectr
Externí odkaz:
https://doaj.org/article/ede4d1e92d9b4c09b6c3016f41ab98a6
Autor:
Yaroslav Shchur, Andrii Bendak, Guillermo Beltramo, Anatoliy S. Andrushchak, Svetlana Vitusevich, Denys Pustovyj, Bouchta Sahraoui, Yurii Slyvka, Andriy V. Kityk
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 1913 (2023)
The synthesis of nanosized organic benzil (C6H5CO)2 crystals within the mesoporous SiO2 host matrix was investigated via X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and ab initio lattice dynamics analysis. Combining these
Externí odkaz:
https://doaj.org/article/e6a8fb9a43424026abaad885aef47ace
Autor:
Ferdinand Gasparyan, Ihor Zadorozhnyi, Hrant Khondkaryan, Armen Arakelyan, Svetlana Vitusevich
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current–voltage (I–V) characterization. The stat
Externí odkaz:
https://doaj.org/article/8a8ae8e3d2ee43af9f802b432ce7befa
Autor:
Kityk, Yaroslav Shchur, Andrii Bendak, Guillermo Beltramo, Anatoliy S. Andrushchak, Svetlana Vitusevich, Denys Pustovyj, Bouchta Sahraoui, Yurii Slyvka, Andriy V.
Publikováno v:
Nanomaterials; Volume 13; Issue 13; Pages: 1913
The synthesis of nanosized organic benzil (C6H5CO)2 crystals within the mesoporous SiO2 host matrix was investigated via X-ray diffraction, transmission electron microscopy, Raman spectroscopy, and ab initio lattice dynamics analysis. Combining these
Autor:
Zhi Jiang, Hezhuang Liu, Jihua Zou, Yixuan Huang, Zhaoquan Xu, Denys Pustovyi, Svetlana Vitusevich
Publikováno v:
RSC Advances 13(9), 5993-6001 (2023). doi:10.1039/D2RA07100B
The designed flexible lead-free Cs3Cu2X5 (X = Cl, Br, I) nanocrystal perovskite photodetectors demonstrate excellent properties, including high photoresponses, strong photoselectivity and bending stability at different irradiation wavelengths.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00f633b254067b2f346f4cf3a9215fc9
https://hdl.handle.net/2128/34136
https://hdl.handle.net/2128/34136
Autor:
Nazarii Boichuk, Yurii Kutovyi, Denys Pustovyi, Yongqiang Zhang, Volker Weihnacht, Svetlana Vitusevich
Publikováno v:
Physica status solidi / A 220(12), 202300024 (2023). doi:10.1002/pssa.202300024
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ce5bb2d0bd852d98248913aa10fd601
https://hdl.handle.net/2128/34590
https://hdl.handle.net/2128/34590
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:407-412
In this work, we have investigated the features of electron transport in AlGaN/GaN transistor-like heterostructures with nanowires of different width. These nanostructures are studied extensively because of their great electronic and sensing advantag