Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT).

Autor: Vershinin, K., Sweet, M., Spulber, O., Hardikar, S., Luther-King, N., De Souza, M.M., Sverdloff, S., Narayanan, E.M.S.

Publikováno v: Proceedings ISPSD '04. the 16th International Symposium on Power Semiconductor Devices & ICs, 2004; 2004, p269-272, 4p