Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Svensson, Bengt Gunnar"'
Autor:
Carvalho, Patricia Almeida, Thørgesen, Annett, Ma, Quanbao, Wright, Daniel Nielsen, Diplas, Spyros, Galeckas, Augustinas, Azarov, Alexander, Jokubavicius, Valdas, Sun, Jianwu, Syväjärvi, Mikael, Svensson, Bengt Gunnar, Løvvik, Ole Martin
Publikováno v:
SciPost Phys. 5, 021 (2018)
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration
Externí odkaz:
http://arxiv.org/abs/1804.06532
Autor:
Kumar, Raj, Bergum, Kristin, Riise, Heine Nygard, Monakhov, Eduard, Galeckas, Augustinas, Svensson, Bengt Gunnar
Publikováno v:
Kumar, Raj Bergum, Kristin Riise, Heine Nygard Monakhov, Eduard Galeckas, Augustinas Svensson, Bengt Gunnar . Impact of post annealing and hydrogen implantation on functional properties of Cu2O thin films for photovoltaic applications. Jo
Jo
Jo
Externí odkaz:
http://hdl.handle.net/10852/85143
https://www.duo.uio.no/bitstream/handle/10852/85143/1/1-s2.0-S0925838820303455-main.pdf
https://www.duo.uio.no/bitstream/handle/10852/85143/1/1-s2.0-S0925838820303455-main.pdf
Autor:
Vasquez, Geraldo Cristian, Johansen, Klaus Magnus H, Galeckas, Augustinas, Vines, Lasse, Svensson, Bengt Gunnar
Publikováno v:
Vasquez, Geraldo Cristian Johansen, Klaus Magnus H Galeckas, Augustinas Vines, Lasse Svensson, Bengt Gunnar . Optical signatures of single ion tracks in ZnO. Nanoscale Advances. 2020, 2(2), 724-733
Nanoscale Advances
Nanoscale Advances
Externí odkaz:
http://hdl.handle.net/10852/83453
https://www.duo.uio.no/bitstream/handle/10852/83453/2/c9na00677j.pdf
https://www.duo.uio.no/bitstream/handle/10852/83453/2/c9na00677j.pdf
Publikováno v:
Kolevatov, Ilia Svensson, Bengt Gunnar Monakhov, Eduard . Correlated annealing and formation of vacancy-hydrogen related complexes in silicon. Jo
Jo
Jo
Autor:
Ingebrigtsen, Mads Eide, Kuznetsov, Andrej, Svensson, Bengt Gunnar, Alfieri, Giovanni, Mihaila, Andrei, Badstübner, U., Perron, A, Vines, Lasse, Varley, Joel B
Publikováno v:
Ingebrigtsen, Mads Eide Kuznetsov, Andrej Svensson, Bengt Gunnar Alfieri, Giovanni Mihaila, Andrei Badstübner, U. Perron, A Vines, Lasse Varley, Joel B . Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3. APL Materials. 2019, 7(2), 022510-1-022510-10
APL Materials
APL Materials
Externí odkaz:
http://hdl.handle.net/10852/75542
https://www.duo.uio.no/bitstream/handle/10852/75542/2/1.5054826.pdf
https://www.duo.uio.no/bitstream/handle/10852/75542/2/1.5054826.pdf
Autor:
Olsen, Vegard Skiftestad, Bazioti, Kalliopi, Baldissera, Gustavo, Azarov, Alexander, Prytz, Øystein, Persson, Clas, Svensson, Bengt Gunnar, Kuznetsov, Andrej, Vines, Lasse
Publikováno v:
Olsen, Vegard Skiftestad Bazioti, Kalliopi Baldissera, Gustavo Azarov, Alexander Prytz, Øystein Persson, Clas Svensson, Bengt Gunnar Kuznetsov, Andrej Vines, Lasse . Effects of Substrate and Post-Deposition Annealing on Structural and Optical Properties of (ZnO)1-x(GaN)x Films. Physica status solidi. B, Basic research. 2019, 256(6)
Physica status solidi. B, Basic research
Physica status solidi. B, Basic research
Externí odkaz:
http://hdl.handle.net/10852/75535
https://www.duo.uio.no/bitstream/handle/10852/75535/2/PSSB_Olsen_et-al.pdf
https://www.duo.uio.no/bitstream/handle/10852/75535/2/PSSB_Olsen_et-al.pdf
Autor:
Ingebrigtsen, Mads Eide, Kuznetsov, Andrej, Svensson, Bengt Gunnar, Alfieri, Giovanni, Mihaila, Andrei, Vines, Lasse
Publikováno v:
Ingebrigtsen, Mads Eide Kuznetsov, Andrej Svensson, Bengt Gunnar Alfieri, Giovanni Mihaila, Andrei Vines, Lasse . Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures. Jo
Jo
Jo
Externí odkaz:
http://hdl.handle.net/10852/75522
https://www.duo.uio.no/bitstream/handle/10852/75522/1/1.5088655.pdf
https://www.duo.uio.no/bitstream/handle/10852/75522/1/1.5088655.pdf
Autor:
Bathen, Marianne Etzelmüller, Coutinho, José, Ayedh, Hussein Mohammed Hussein, Hassan, Jawad U, Farkas, Ildiko, Öberg, Sven, Frodason, Ymir Kalmann, Svensson, Bengt Gunnar, Vines, Lasse
Publikováno v:
Bathen, Marianne Etzelmüller Coutinho, José Ayedh, Hussein Mohammed Hussein Hassan, Jawad U Farkas, Ildiko Öberg, Sven Frodason, Ymir Kalmann Svensson, Bengt Gunnar Vines, Lasse . Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment. Physical review B (PRB). 2019, 100(1), 014103-1-014103-15
Physical review B (PRB)
Physical review B (PRB)
Externí odkaz:
http://hdl.handle.net/10852/75847
https://www.duo.uio.no/bitstream/handle/10852/75847/2/submitted.pdf
https://www.duo.uio.no/bitstream/handle/10852/75847/2/submitted.pdf
Autor:
Olsen, Vegard Skiftestad, Baldissera, Gustavo, Zimmermann, Christian, Granerød, Cecilie Skjold, Bazioti, Kalliopi, Galeckas, Augustinas, Svensson, Bengt Gunnar, Kuznetsov, Andrej, Persson, Clas, Prytz, Øystein, Vines, Lasse
Publikováno v:
Olsen, Vegard Skiftestad Baldissera, Gustavo Zimmermann, Christian Granerød, Cecilie Skjold Bazioti, Kalliopi Galeckas, Augustinas Svensson, Bengt Gunnar Kuznetsov, Andrej Persson, Clas Prytz, Øystein Vines, Lasse . Evidence of defect band mechanism responsible for band gap evolution in (ZnO)1−x(GaN)x alloys. Physical review B (PRB). 2019, 100(16)
Physical review B (PRB)
Physical review B (PRB)
Externí odkaz:
http://hdl.handle.net/10852/74357
https://www.duo.uio.no/bitstream/handle/10852/74357/1/PhysRevB.100.165201.pdf
https://www.duo.uio.no/bitstream/handle/10852/74357/1/PhysRevB.100.165201.pdf