Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sven Schmidbauer"'
Autor:
Sven Schmidbauer, Jens Hahn, Olaf Storbeck, Frank Jakubowski, Jürgen Faul, Axel Buerke, Yu-Wei Ting, Thomas Schuster
Publikováno v:
Microelectronic Engineering. 85:2037-2041
Novel dual work function (DWF) based transistors featuring low gate resistances are presented. The process discussed enables extremely fast array timings easily and is thus key to fulfilling the performance requirements for high performance DRAM chip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c5fe77fcf6eccbc5ba6e879b7b4e55f
https://doi.org/10.1016/j.mee.2008.07.010
https://doi.org/10.1016/j.mee.2008.07.010
Autor:
Audrey Beckert, Werner Graf, Kristin Schupke, Clemens Fitz, Sven Schmidbauer, Ines Thuemmel, Momtchil Stavrev
Publikováno v:
Microelectronic Engineering. 85:2025-2027
Conventional DRAM contact to Si cleaning methods are using wet HF-based chemistry to remove the native SiO"2 from the contact bottom and reduce the contact resistance [M.R. Baklanov, et al., J. Electrochem. Soc. 145 (9) (1998) 3240-3246]. With furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df778857bd8a5b6feb68f5339878c5e3
https://doi.org/10.1016/j.mee.2008.07.011
https://doi.org/10.1016/j.mee.2008.07.011
Publikováno v:
SPIE Proceedings.
In many fabs for quarter micron and below technologies a stack consisting of Ti/TiN/AlCu/TiN or Ti/AlCu/TiN is being used for metallization. A new approach for metal stack deposition of 0.25 micrometers and beyond, utilizing hew design rules, has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b3619d6dea75761b09544b8a1d7ca46
https://doi.org/10.1117/12.360582
https://doi.org/10.1117/12.360582
Autor:
Wolfgang Leiberg, J. Bachmann, Sven Schmidbauer, Lothar Bauch, Peter Moll, Veronika Polei, E. Lueken, Mirko Vogt
Publikováno v:
SPIE Proceedings.
The reduction of chip size by using the stitched word line architecture for the 256 M DRAM design demands a maximum metal sheet resistance of 140 mOhm/sq. To meet this requirement a metal thickness of 380 nm is necessary. Our investigations showed th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89f5c3ea93ba12f20113b13a90b893f4
https://doi.org/10.1117/12.360576
https://doi.org/10.1117/12.360576