Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Sven Hofling"'
Autor:
Nikolai B. Chichkov, Amit Yadav, Franck Joulain, Solenn Cozic, Semyon V. Smirnov, Leon Shterengas, Julian Scheuermann, Robert Weih, Johannes Koeth, Sven Hofling, Ulf Hinze, Samuel Poulain, Edik U. Rafailov
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 1, Pp 1-7 (2023)
Building upon recent advances in GaSb-based diode lasers and Er-doped fluoride fibre technologies, this article demonstrates for the first time the fibre-based amplification of mid-infrared diode lasers in the wavelength range around 2.78 $\mu$m. The
Externí odkaz:
https://doaj.org/article/a37e7787f3d54c19a54738c4bb22c96e
Autor:
Josephine Nauschotz, Hedwig Knotig, Robert Weih, Julian Scheuermann, Benedikt Schwarz, Sven Hofling
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Autor:
Davide Cimbri, Begum Yavas-Aydin, Fabian Hartmann, Fauzia Jabeen, Lukas Worschech, Sven Hofling, Edward Wasige
Publikováno v:
IEEE Transactions on Electron Devices
In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b94534e64460769693aef07ea60014a
https://eprints.gla.ac.uk/271617/2/271617.pdf
https://eprints.gla.ac.uk/271617/2/271617.pdf
Autor:
Lukasz Dusanowski, Magdalena Moczala-Dusanowska, Sebastian Klembt, Christian Schneider, Tobias Huber, Sven Hofling
Publikováno v:
2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM).
Autor:
Shlomi Bouscher, Dmitry Panna, Ronen Jacovi, Fauzia Jabeen, Christian Schneider, Sven Höfling, Alex Hayat
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-10 (2024)
Abstract Superconductor-semiconductor hybrid devices can bridge the gap between solid-state-based and photonics-based quantum systems, enabling new hybrid computing schemes, offering increased scalability and robustness. One example for a hybrid devi
Externí odkaz:
https://doaj.org/article/e04f6fa681b941458ea41228c310e279
Autor:
Hannah Thiel, Lennart Jehle, Robert J. Chapman, Stefan Frick, Hauke Conradi, Moritz Kleinert, Holger Suchomel, Martin Kamp, Sven Höfling, Christian Schneider, Norbert Keil, Gregor Weihs
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract Mass-deployable implementations for quantum communication require compact, reliable, and low-cost hardware solutions for photon generation, control and analysis. We present a fiber-pigtailed hybrid photonic circuit comprising nonlinear waveg
Externí odkaz:
https://doaj.org/article/98ce32c1ac2f442ebc25abd1091a0b5d
Autor:
Simon Betzold, Johannes Düreth, Marco Dusel, Monika Emmerling, Antonina Bieganowska, Jürgen Ohmer, Utz Fischer, Sven Höfling, Sebastian Klembt
Publikováno v:
Advanced Science, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract Artificial 1D and 2D lattices have emerged as a powerful platform for the emulation of lattice Hamiltonians, the fundamental study of collective many‐body effects, and phenomena arising from non‐trivial topology. Exciton‐polaritons, bo
Externí odkaz:
https://doaj.org/article/cb553ff91f85465e835de23030b237cb
Autor:
Nicolas Schäfer, Robert Weih, Julian Scheuermann, Florian Rothmayr, Johannes Koeth, Sven Höfling
Publikováno v:
Sensors, Vol 24, Iss 12, p 3843 (2024)
We demonstrate substrate-emitting resonant cavity interband cascade light emitting diodes (RCICLEDs) based on a single distributed Bragg reflector (DBR). These devices operate in continuous wave mode at room temperature. Compared to standard ICLEDs w
Externí odkaz:
https://doaj.org/article/c031ca6137fb483bbb75aacf33d7079f
Autor:
Josephine Nauschütz, Julian Scheuermann, Robert Weih, Johannes Koeth, Benedikt Schwarz, Sven Höfling
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract Single‐mode distributed feedback GaSb‐based interband cascade lasers with record emission beyond 6.1 µm are presented. The results are based on an epitaxial design with reduced resonant intersubband absorption in the valence band and re
Externí odkaz:
https://doaj.org/article/520fa4a1a2124f9883b1f3739a48b48b
Autor:
Marcin Syperek, Raul Stühler, Armando Consiglio, Paweł Holewa, Paweł Wyborski, Łukasz Dusanowski, Felix Reis, Sven Höfling, Ronny Thomale, Werner Hanke, Ralph Claessen, Domenico Di Sante, Christian Schneider
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Here, the authors report the observation of room temperature excitons in a single layer of bismuth atoms epitaxially grown on a SiC substrate - a material of non-trivial global topology - with excitonic and topological physics deriving from the very
Externí odkaz:
https://doaj.org/article/1ac2e59141cc44bd8416f4f118143c7a