Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sven Eitel"'
Publikováno v:
Optical Fiber Communication Conference (OFC) 2022.
This paper reviews II-VI’s 106 Gb/s PAM-4 multi-mode VCSELs for commercial 800G transceiver applications. The VCSEL provides 27 GHz bandwidth, RIN of -150 dB/Hz, 0.25 nm spectral width and shows an excellent reliability.
Publikováno v:
Asia Communications and Photonics Conference 2015.
Energy efficient VCSEL designs with 10 GHz 3 dB modulation response at 2 mA current suitable for 28 Gbps PAM4 modulation are presented.
Autor:
A.R. Boyd, S.J. Fancey, M. G. Forbes, Andrew C. Walker, Paul Horan, Sven Eitel, Jean-Louis Gutzwiller, Mohammad R. Taghizadeh, John Hegarty, D. Byrne, Karlheinz H. Gulden, J.A.B. Dines, Philippe Benabes, A. Gauthier, Gerald S. Buller, Marc P.Y. Desmulliez, C.R. Stanley, H.-P. Gauggel, Giovanni Pennelli, M. Goetz
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:236-249
The completed detailed design and initial phases of construction of an optoelectronic crossbar demonstrator are presented. The experimental system uses hybrid very large scale integrated optoelectronics technology whereby InGaAs-based detectors and m
Autor:
Mohammad R. Taghizadeh, Sven Eitel, S.J. Fancey, Karlheinz H. Gulden, W. Bachtold, H.-P. Gauggel
Publikováno v:
IEEE Photonics Technology Letters. 12:459-461
In this paper, work is described on the fabrication of highly uniform 8/spl times/8 arrays of GaAs-AlGaAs vertical-cavity surface-emitting lasers (VCSEL's). Oxide-confined VCSEL arrays show an average threshold current of 0.74/spl plusmn/0.02 mA, an
Autor:
Rafael Santschi, Bernd Witzigmann, Sven Eitel, Franck Nallet, Hektor Meier, Stefan Odermatt, Gergö Letay
Publikováno v:
SPIE Proceedings.
Electrostatic Discharge (ESD) events can cause irreversible damage during production, packaging and application of Vertical-Cavity Surface Emitting Lasers (VCSELs). Experimental investigation of those damage patterns inside a real device is a complex
Publikováno v:
Journal of Computational Electronics, 6 (1-3)
Journal of Computational Electronics, 6 (1-3)
ISSN:1569-8025
ISSN:1572-8137
ISSN:1569-8025
ISSN:1572-8137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d798f1cfb5ff5388dada7d7cabe79c7
Publikováno v:
SPIE Proceedings.
Yield enhancement and reliability improvement are main requirements in todays industrial VCSEL manufacturing. This requires a thorough understanding of process tolerances and the effects resulting from design variations. So far, this has been done by
Publikováno v:
NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005..
A novel version of the commercial device simulator DESSIS-Laser is used to simulate the temperature-dependent static and dynamic characteristics of a multi mode vertical-cavity surface-emitting laser. The microscopic simulation shows a saturation of
Autor:
M.G. Forbes, D. Byrne, Sven Eitel, P. Horan, Marc P.Y. Desmulliez, Karlheinz H. Gulden, J.A.B. Dines, Gerald S. Buller, A. Gauthier, S.J. Fancey, John H. Marsh, A. C. Walker, C.R. Stanley, G. Pennelli, M. Goetz, P. Benabes, John Hegarty, M. R. Taghizadeh
Publikováno v:
CLEO/Europe Conference on Lasers and Electro-Optics.
Autor:
Marc P.Y. Desmulliez, John Hegarty, J.J. Casswell, J. L. Pearson, Gerald S. Buller, Andrew C. Walker, Sven Eitel, J. Oksman, P. Horan, Jean-Louis Gutzwiller, M. G. Forbes, H.-P. Gauggel, S.J. Fancey, D. Byrne, J.A.B. Dines, Karlheinz H. Gulden, A. Gauthier, C.R. Stanley, M. Goetz, A.R. Boyd, M. R. Taghizadeh, Philippe Benabes, Giovanni Pennelli
The experimental operation of a terabit-per-second scale optoelectronic connection to a silicon very-large-scale-integrated circuit is described. A demonstrator system, in the form of an optoelectronic crossbar switch, has been constructed as a techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de901149a5e5ef0ed1cde8ba94644561
https://eprints.gla.ac.uk/3899/1/3899.pdf
https://eprints.gla.ac.uk/3899/1/3899.pdf