Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sven Besendörfer"'
Publikováno v:
Crystals, Vol 10, Iss 12, p 1100 (2020)
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVP
Externí odkaz:
https://doaj.org/article/1a4f0af0e7d342428fee148fc4fdc649
Autor:
Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publikováno v:
Materials, Vol 13, Iss 19, p 4271 (2020)
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (refe
Externí odkaz:
https://doaj.org/article/88176e92e6d1424b87da93eeff80f28b
Autor:
Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Publikováno v:
Micromachines, Vol 11, Iss 1, p 101 (2020)
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analy
Externí odkaz:
https://doaj.org/article/5f6cca3341cf44bf829b66521fed87ef
Publikováno v:
Applied Physics Express. 15:095502
Threading dislocations in the AlGaN-barrier of four pairwise differently grown AlGaN/GaN high electron mobility transistor structures on Si were investigated with respect to their structural and electrical properties in direct comparison simultaneous
Autor:
Stefan Degroote, Farid Medjdoub, Joff Derluyn, Roland Püsche, Marianne Germain, Davide Benazzi, Sven Besendörfer, Riad Kabouche, Alaleh Tajalli, Matteo Meneghini, Idriss Abid, Elke Meissner, Enrico Zanoni, Matteo Borga, Gaudenzio Meneghesso, Carlo De Santi
Publikováno v:
Micromachines
Volume 11
Issue 1
Micromachines, Vol 11, Iss 1, p 101 (2020)
Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩
Micromachines, MDPI, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩
Volume 11
Issue 1
Micromachines, Vol 11, Iss 1, p 101 (2020)
Micromachines, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩
Micromachines, MDPI, 2020, 11 (1), 101, 9 p. ⟨10.3390/mi11010101⟩
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analy
Autor:
Roland Weingärtner, Tobias Unruh, Stephan Müller, Sven Besendörfer, Ulrich Bläß, Matthias Weisser, Elke Meissner, Boris M. Epelbaum, Thomas Wicht
Publikováno v:
Journal of Applied Crystallography
AlN single crystals grown by physical vapor transport have been analyzed by X-ray methods to evaluate dislocation types, densities and spatial distribution within the crystal. Potential changes of the AlN crystal quality during growth, both within th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a238242efed6f6c3986d65029876b97c
Autor:
Sven Besendörfer, Elke Meissner, Farid Medjdoub, Joff Derluyn, Jochen Friedrich, Tobias Erlbacher
Publikováno v:
Scientific Reports
Autor:
Sven Besendörfer, Hannes Behmenburg, Jochen Friedrich, Tobias Erlbacher, Holger Kalisch, Dirk Fahle, Hady Yacoub, Andrei Vescan, Elke Meissner, Thorsten Zweipfennig
Publikováno v:
AIP Advances
AIP Advances, Vol 10, Iss 4, Pp 045028-045028-6 (2020)
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
AIP Advances, Vol 10, Iss 4, Pp 045028-045028-6 (2020)
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
Published by American Inst. of Physics, New York, NY
Published by American Inst. of Physics, New York, NY
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17babc08065a2d2f01a5ee2fbac67c79
https://publica.fraunhofer.de/handle/publica/262275
https://publica.fraunhofer.de/handle/publica/262275
Publikováno v:
Annalen der Physik. 529:1700046
Based on its electronic, structural, chemical, and mechanical properties, many potential applications have been proposed for graphene. In order to realize these visions, graphene has to be synthesized, grown, or exfoliated with properties that are de
Autor:
Enrico Zanoni, Sven Besendörfer, Idriss Abid, Gaudenzio Meneghesso, Farid Medjdoub, Stefan Degroote, Riad Kabouche, Joff Derluyn, Elke Meissner, Roland Püsche, Marianne Germain, Matteo Meneghini, Alaleh Tajalli
Publikováno v:
Materials
Volume 13
Issue 19
Materials, MDPI, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩
Materials, Vol 13, Iss 4271, p 4271 (2020)
Materials, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩
Volume 13
Issue 19
Materials, MDPI, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩
Materials, Vol 13, Iss 4271, p 4271 (2020)
Materials, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (refe