Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Suzuko Ishizawa"'
Autor:
Shigehisa Ohki, Suzuko Ishizawa, Mitsuo Usui, Tsuyoshi Hayashi, Shigeki Ishibashi, Hirooki Hirata, Nobutatsu Koshoubu
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 4:1582-1588
We have developed a new type of single-mode optical waveguide film with a low coefficient of thermal expansion (CTE). The low-CTE film was fabricated by sandwiching a fluorinated polyimide optical waveguide layer between low-CTE polyimide layers. Its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320b06ad38f96253f73727586405f733
https://doi.org/10.1109/tcpmt.2014.2345101
https://doi.org/10.1109/tcpmt.2014.2345101
Publikováno v:
Ferroelectrics. 148:277-283
The properties of the binary mixtures of polymer FLCs with a low degree of polymerization and low molecular-weight compounds and othzr polymers are presented. Copolymers were also studied to increase the compatibility of the mesogens. Phase separatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d44477ab78e9a594509ec727d49699c
https://doi.org/10.1080/00150199308019955
https://doi.org/10.1080/00150199308019955
Autor:
Hideki Tsunetsugu, Nobutatsu Koshoubu, Hideyuki Takahara, Hirooki Hirata, Shigeki Ishibashi, Suzuko Ishizawa
Publikováno v:
1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
As a next-generation film carrier packaging technique intended for applications to high-speed large-capacity optical modules, OE-COF (Optoelectronic Chip on Film) packaging is proposed, in which LSIs and optical devices are installed on an optoelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2da96b6782aa7d745bd05c683ce3b69
https://doi.org/10.1109/leos.1999.813492
https://doi.org/10.1109/leos.1999.813492
Publikováno v:
Japanese Journal of Applied Physics. 31:3296
Ge islands are grown by molecular beam epitaxy (MBE) on Si(111) surfaces with an SPE-grown buffer layer, which was expected to prevent intermixing between the epitaxial Ge layer and the Si substrate. The epilayer composition analyzed from the spacing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eebab7a574d25f925b6a771ba02d452
https://doi.org/10.1143/jjap.31.3296
https://doi.org/10.1143/jjap.31.3296
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Conference
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