Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Suzanne Lancaster"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Suzanne Lancaster, Patrick D. Lomenzo, Moritz Engl, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck
Publikováno v:
Frontiers in Nanotechnology, Vol 4 (2022)
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin film
Externí odkaz:
https://doaj.org/article/256c33b1aa424843b58a853c6579a308
Autor:
H Alex Hsain, Younghwan Lee, Suzanne Lancaster, Patrick D Lomenzo, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Gregory N Parsons, Jacob L Jones
Publikováno v:
Nanotechnology.
Hf0.5Zr0.5O2 (HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been
Autor:
Hanan Alexandra Hsain, Younghwan Lee, Suzanne Lancaster, Monica Materano, Ruben Alcala, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Gregory N. Parsons, Jacob L. Jones
Publikováno v:
ACS applied materialsinterfaces. 14(37)
Hafnia-zirconia (HfO
Autor:
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero, Adrian Gudin, Thomas Mikolajick, Paolo Perna, Stefan Slesazeck
Publikováno v:
Repositorio Institucional del Instituto Madrileño de Estudios Avanzados en Nanociencia
instname
instname
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was investigated. Different metals were deposited as nucleation layers via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab808fe53257fe3ecf3ea0e2b46ad51e
http://arxiv.org/abs/2208.14061
http://arxiv.org/abs/2208.14061
Publikováno v:
Electronics
Volume 12
Issue 5
Pages: 1163
Volume 12
Issue 5
Pages: 1163
Computing systems are becoming more and more power-constrained due to unconventional computing requirements like computing on the edge, in-sensor, or simply an insufficient battery. Emerging Non-Volatile Memories are explored to build low-power compu
Autor:
Marco Massarotto, Francesco Driussi, Antonio Affanni, Suzanne Lancaster, Stefan Slesazeck, Thomas Mikolajick, David Esseni
Publikováno v:
Solid-State Electronics. 200:108569
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests the applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d6a2c4024f023b9ec295aaf47ff562
Autor:
Vladimir G. Dubrovskii, Maximilian G. Bartmann, Hermann Detz, Masiar Sistani, Ilaria Zardo, S. Benter, Alessio Campo, Suzanne Lancaster, Alois Lugstein, Michael Stöger-Pollach
Publikováno v:
Nano Letters. 19:3892-3897
The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostruc
Autor:
Laurent Grenouillet, Philip N. Klein, Justine Barbot, Jean Coignus, Suzanne Lancaster, Stefan Slesazeck, Ole Richter, Erika Covi, Elisabetta Chicca, Athanasios Dimoulas, Viktor Havel, Quang T. Duong, Thomas Mikolajick
Publikováno v:
2021 IEEE International Symposium on Circuits and Systems (ISCAS)
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5
STARTPAGE=1;ENDPAGE=5;TITLE=2021 IEEE International Symposium on Circuits and Systems (ISCAS)
ISCAS
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1af75b3353a782f4547b577c8bc65d59
https://pub.uni-bielefeld.de/record/2959788
https://pub.uni-bielefeld.de/record/2959788