Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Suwan P. Mendis"'
Publikováno v:
International Journal of Fundamental Physical Sciences. 3:75-78
Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity dopin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a74c3337ce1eb147b35317bb039da3
https://doi.org/10.14331/ijfps.2013.330059
https://doi.org/10.14331/ijfps.2013.330059
Autor:
Chee-Wee Liu, Qiang Xu, Zhi Ren Qiu, Kung-Yen Lee, Zhengyun Wu, Cheng Chen, Suwan P. Mendis, Ling Yun Jang, Chin-Che Tin, Zhe Chuan Feng
Publikováno v:
Materials Science Forum. :505-508
FTIR, Visible and UV Raman scattering, as well as synchrotron radiation X-ray absorption, in combination, have been employed to investigate a series of CVD grown 3C-SiC/Si (100). Significant results on the optical and atomic bonding properties are ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73751d9aed7d1ed9f99ab0c0fbfb78e0
https://doi.org/10.4028/www.scientific.net/msf.717-720.505
https://doi.org/10.4028/www.scientific.net/msf.717-720.505
Publikováno v:
Materials Science Forum. :837-840
An electroless nickel film contains 5-14% by weight of phosphorus. Because of the presence of such a high concentration of phosphorus, electroless nickel can be a useful and convenient source of phosphorus dopant in the fabrication of n-type ohmic co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53581a4bb7458945b9a7b08d2df83495
https://doi.org/10.4028/www.scientific.net/msf.717-720.837
https://doi.org/10.4028/www.scientific.net/msf.717-720.837
Autor:
Rusli, Victor Adedeji, Tojiddin M. Saliev, Kerlit Chew, Chin-Che Tin, B. G. Atabaev, Suwan P. Mendis, I. G. Atabaev, E. N. Bakhranov
Publikováno v:
Thin Solid Films. 518:e118-e120
A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5988b09a1230f6db5b3ebc520327d2d
https://doi.org/10.1016/j.tsf.2010.03.107
https://doi.org/10.1016/j.tsf.2010.03.107
Autor:
Hua Yang Sun, Zhe Chuan Feng, Ling Yun Jang, Chee-Wee Liu, Qiang Xu, Zhengyun Wu, E. Rusli, Zhi Ren Qiu, Cheng Chen, Chin-Che Tin, Suwan P. Mendis
Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c50877de06ded2762973e3d39a120a8
https://hdl.handle.net/10356/97866
https://hdl.handle.net/10356/97866
Autor:
Suwan P. Mendis, Chin-Che Tin
Publikováno v:
MRS Proceedings. 1246
Phosphorus is an important n-type dopant for both silicon and silicon carbide. Although solid-state diffusion of phosphorus in silicon has been well documented and experimentally proven, not much is known about phosphorus solid-state diffusion in sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5471b19a8f42a60bd2d4e3b41ffcd38
https://doi.org/10.1557/proc-1246-b07-12
https://doi.org/10.1557/proc-1246-b07-12
Publikováno v:
Journal of Applied Physics. 114:244502
Oxidation and silicidation have been found to enhance phosphorus diffusion and incorporation in 4H-SiC. Depth profiling by secondary ion mass spectrometry showed significant concentration of phosphorus in the order of 1018–1019 cm−3 in the near-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d34d3d2d2b56b377d4dcea4cae5fa02c
https://doi.org/10.1063/1.4854816
https://doi.org/10.1063/1.4854816