Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Suvi Haukka"'
Autor:
Michael Eugene Givens, Mikko Ritala, Tom E. Blomberg, Suvi Haukka, Marko Tuominen, Simon D. Elliott, Suresh Kondati Natarajan, Varun Sharma
Funding Information: The authors thank Eurofins EAG Materials Science, LLC (California, USA) for the TEM analysis. S.K.N. thanks ICHEC and the Science Foundation Ireland funded computing center of Tyndall National Institute for computer time. S.K.N.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cf60432dff29ef3691bdf600bffcf3a
https://aaltodoc.aalto.fi/handle/123456789/112919
https://aaltodoc.aalto.fi/handle/123456789/112919
Autor:
Mikko Ritala, Tom E. Blomberg, Suvi Haukka, Varun Sharma, Michael Eugene Givens, Marko Tuominen, Simon D. Elliott
Thermal atomic layer etching (ALEt) of amorphous Al2O3 was performed by alternate exposures of niobium pentafluoride (NbF5) and carbon tetrachloride (CCl4). The ALEt of Al2O3 is observed at temperatures from 380 to 460 degrees C. The etched thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff1c691cd10c5d76b23653f4a6d79c67
http://hdl.handle.net/10138/343050
http://hdl.handle.net/10138/343050
Autor:
Jeffrey W. Elam, Markku Leskelä, Steven M. George, Suvi Haukka, Mikko Ritala, S. M. Rossnagel, Hyeongtag Jeon, Wilhelmus M. M. Kessels, Gregory N. Parsons, Paul Poodt
Publikováno v:
Journal of Vacuum Science & Technology A. 38:037001
The authors of this review article published in 20131 would like to correct some text and references relating to the first observations and publications on molecular layering. In Sec. II, “Early Years of Atomic Layer Processes” in the original ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2ce87dc5287e3ad23cd5f17661856c7
https://doi.org/10.1116/6.0000143
https://doi.org/10.1116/6.0000143
Autor:
Suvi Haukka, Yoann Tomczak, Mikko Ritala, Marianna Kemell, Mikko Heikkilä, Marcel Ceccato, Markku Leskelä, Kjell Knapas
Publikováno v:
Tomczak, Y, Knapas, K, Haukka, S, Kemell, M, Haikkilä, M, Ceccato, M, Leskelä, M & Ritala, M 2012, ' In Situ Reaction Mechanism Studies on Atomic Layer Deposition of AlxSiyOz from Trimethylaluminium, Hexakis(ethylamino)disilane, and Water ', Chemistry of Materials, vol. 24, no. 20, pp. 3859-3867 . https://doi.org/10.1021/cm301658m
Reaction mechanisms in the Al(CH3)3–D2O–Si2(NHEt)6–D2O ALD process for AlxSiyOz were studied in situ with a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS) at 200 °C. Two...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50816dfa9dc3b6b03f4f015e39046720
https://doi.org/10.1021/cm301658m
https://doi.org/10.1021/cm301658m
Autor:
Suvi Haukka, Ch. Wenger, M. Lukosius, T. Saukkonen, Marko Tuominen, Jaakko Anttila, Tom E. Blomberg
Publikováno v:
Thin Solid Films. 520:6535-6540
Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2–1 μm) and low X-ray reflectivity roughness (~ 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu 3 Cp)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edd46d1c1793d7a1e0b6bf9277ca53bc
https://doi.org/10.1016/j.tsf.2012.06.059
https://doi.org/10.1016/j.tsf.2012.06.059
Publikováno v:
ECS Transactions. 13:453-457
A remarkably high growth rate of more than 1 Aå/cycle was obtained when using a new aminosilane precursor AHEAD{trade mark, serif} for atomic layer deposition of SiO2 thin films. The films were deposited at 150 - 300 {degree sign}C on 200 mm wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56c38bc1f2ebb693acbfbd1f45a51754
https://doi.org/10.1149/1.2911529
https://doi.org/10.1149/1.2911529
Autor:
Suvi Haukka, Eva Tois, Pamela R. Fischer, Peter Zagwijn, Jacky Sirugue, Olivier Rouault, Dieter Pierreux
Publikováno v:
ECS Transactions. 16:135-148
Thermal ALD deposition of ZrO2 and HfO2 films has been performed in the ASM A412(TM) 300mm vertical furnace using bis-cyclopentadienyl precursors. Due to the long precursor residence time and high surface area to be covered in a batch reactor, the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceaf93f0d6ac6c4a66444f57707100ac
https://doi.org/10.1149/1.2979988
https://doi.org/10.1149/1.2979988
Autor:
Suvi Haukka, Koen de Peuter, Wilhelmus M. M. Kessels, SE Stephen Potts, Viljami Pore, Harm C. M. Knoops, Eline M. J. Braeken
Publikováno v:
ACS Applied Materials & Interfaces, 7(35), 19857-19862. American Chemical Society
Atomic layer deposition (ALD) of silicon nitride (SiNx) is deemed essential for a variety of applications in nanoelectronics, such as gate spacer layers in transistors. In this work an ALD process using bis(tert-butylamino)silane (BTBAS) and N2 plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87de8ae317a5b61794d681e7c47607ff
https://pubmed.ncbi.nlm.nih.gov/26305370
https://pubmed.ncbi.nlm.nih.gov/26305370
Publikováno v:
ECS Transactions. 1:131-135
Niobium nitride NbN and niobium silicon nitride Nb(Si)N were deposited by Atomic Layer Deposition (ALD) from niobium pentachloride NbCl5, silicon tetrachloride SiCl4, and ammonia NH3. It was shown that low resistivity NbN can be more readily processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f522e2ac5b92882abec3a19062f2d65
https://doi.org/10.1149/1.2209338
https://doi.org/10.1149/1.2209338
Autor:
Antti Rahtu, Markku Leskelä, Timo Hatanpää, Mikko Ritala, Marko Vehkamäki, Raija Matero, Suvi Haukka, Marko Tuominen
Publikováno v:
ECS Transactions. 1:137-141
BaTiO3 films were deposited onto 200 mm silicon wafers by Atomic Layer Deposition (ALD) from barium bis(tris(tert-butyl) cyclopentadienyl) Ba(tBu3CpH2)2, titanium methoxide Ti(OMe)4 and water H2O. The films were characterized for thickness uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae85e412c57dd833cd87542deec44906
https://doi.org/10.1149/1.2209339
https://doi.org/10.1149/1.2209339