Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Susumu Harako"'
Autor:
Gisele G. Santos, Oscar Peitl, Akio Koike, Shusaku Akiba, Shigeki Sawamura, Mikio Nagano, Yoshitaka Saijo, Susumu Harako, Satoshi Yoshida, Edgar D. Zanotto
Publikováno v:
Journal of the American Ceramic Society. 106:596-612
Publikováno v:
Microelectronic Engineering. 141:280-284
Display Omitted We propose an easy way to form graphene by dip-coating.The Orange II was coated on the Ni/SiO2/Si surface by the dipping.We mainly focused on the formation mechanism of graphene on nickel thin film.We suggested that an azo group which
Publikováno v:
Microelectronic Engineering. 121:96-99
Monolayer graphene and graphite thin films were fabricated on SiO"2/Si substrates by organic coating and post annealing. Pure nickel (Ni) was deposited on the substrate surface as the catalyst. Then the samples were dipped in the Orange II organic so
Publikováno v:
Electronics and Communications in Japan. 96:1-7
The roles of electrons and holes in the photoexcitation of a samarium-doped titanium dioxide (TiO2:Sm) thin film were investigated with electrical measurement techniques. To determine these roles, the holes were selectively injected into TiO2:Sm by u
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 132:1255-1260
Autor:
Tomohiro Kobayashi, Yusuke Katayama, Susumu Harako, Takashi Meguro, Xinwei Zhao, Shuji Komuro
Publikováno v:
Microelectronic Engineering. 86:1155-1158
The ErSi"2 nanowires were formed on Si(110) substrate by a self-assembly process. The wires were highly parallel and grew along the Si direction. For size controlling of the wires, the deposited layer thickness of Er and the annealing temperature wer
Autor:
Takitaro Morikawa, Hiroaki Aizawa, Toru Katsumata, Xinwei Zhao, S. Komuro, K. Sato, Susumu Harako
Publikováno v:
Journal of Crystal Growth. 275:e1137-e1141
Long afterglow phosphorescent SrAl 2 O 4 :Eu,Dy thin films have been fabricated on Si substrate by laser ablation. The thin film phosphors show the intense green emission near 520 nm, and additional emissions near 390 nm and near 450 nm that are orig
Publikováno v:
Journal of Crystal Growth. 275:e2263-e2267
ErSi 2 nanowires with a length of several micrometers have been fabricated on Si substrates. The starting samples were highly Er-doped amorphous Si thin layers formed by laser ablating an Si:Er 2 O 3 mixture target. After post-annealing in vacuum, th
Publikováno v:
International Journal of Modern Physics B. 16:4294-4301
Er and Yb have been doped into nanocrystalline Si and ZnO thin films. Sharp and intense photoluminescence (PL) lines related to intra-4f transitions in the rare earth ions were observed. The optical transition dynamics of the rare earth ions were inv
Autor:
Kazuki Kouno, Susumu Harako, Takashi Meguro, Takashi Kuzuu, Xinwei Zhao, Ryouki Watanabe, Tomohiro Kobayashi
Publikováno v:
Japanese Journal of Applied Physics. 45:5535-5537
Very long ErSi2 nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si direction. Nanowires with lengths more than 50 µm were fabricated. It was observed by transmission electron mi