Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Susumu Fujimura"'
Autor:
Katsuaki Sakurai, Feng Lu, Kenro Kubota, Hiroshi Sugawara, Yoshihiko Shindo, Steve Choi, Junji Musha, Yusuke Ochi, Hao Nguyen, Hiroshi Nakamura, Yee Koh, Yasuhiro Suematsu, Ryo Fukuda, Tomoko Nishiuchi, Spiros Georgakis, Keyur Payak, Masatsugu Kojima, Sanad Bushnaq, Naoki Kobayashi, Kwang-ho Kim, Hiroe Minagawa, Manabu Sato, Yuuki Shimizu, Naoaki Kanagawa, Susumu Fujimura, Teruo Takagiwa, Kenichi Abe, Takahiro Shimizu, Toshiki Hisada, Taichi Wakui, Hiroshi Maejima, Susumu Ozawa, Makoto Miakashi, Srinivas Rajendra, Kazushige Kanda, Hiroshi Yoshihara, Namas Raghunathan, Akihiro Imamoto, Koji Hosono, Dong He, Satoshi Inoue, Masatsugu Ogawa, Seungpil Lee, Jumpei Sato, Fumihiro Kono, Yuui Shimizu, Kazuhiko Satou, Takuya Futatsuyama, Venky Ramachandra, Naohito Morozumi, Weihan Wang, Tomoharu Hashiguchi, Hicham Haibi, Noboru Shibata, Takatoshi Minamoto, Xu Li, Kouichirou Yamaguchi, Toshifumi Hashimoto, Takahiro Yamashita, Ken Cheah, Mitsuhiro Abe, Tetsuya Kaneko, Tadashi Yasufuku, Takahiro Sugimoto
Publikováno v:
ISSCC
The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1]. Since then, memory bit density has grown rapidly due to the increase in the number of stacked layers from continuous 3D technology innovations. On the other hand, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97bbed59d5735369bb77aa3c73309af7
https://doi.org/10.1109/isscc.2018.8310321
https://doi.org/10.1109/isscc.2018.8310321
Autor:
Koji Hosono, M. Kojima, Shigeo Ohshima, Susumu Fujimura, Shouchang Tsao, N. Hayashida, H. Waki, Ken Oowada, Jeffrey W. Lutze, Makoto Iwai, G. Hemink, Kiyofumi Sakurai, H. Otake, Sumio Tanaka, Mehrdad Mofidi, Shih-Chung Lee, Y. Nozawa, Yohji Watanabe, Y. Kameda, Ken Takeuchi, Jun Wan, Masanobu Shirakawa, K. Hatakeyama, A. Cernea, Teruhiko Kamei, Yoshihiko Shindo, Hitoshi Shiga, Yan Li, Takuya Futatsuyama, Jia-Yi Fu, Masaaki Higashitani, Masayuki Ichige, K. Kanazawa, Naoya Tokiwa, Shinji Sato
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:219-232
A single 3.3-V only, 8-Gb NAND flash memory with the smallest chip to date, 98.8 mm2, has been successfully developed. This is the world's first integrated semiconductor chip fabricated with 56-nm CMOS technologies. The effective cell size including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab1a92d12aed75d87a83c6649933ac8
https://doi.org/10.1109/jssc.2006.888299
https://doi.org/10.1109/jssc.2006.888299
Autor:
Norifumi Kajimura, H. Otake, F. Ito, Kazushige Kanda, Y. Okukawa, Teruhiko Kamei, Mitsuhiro Noguchi, M. Higashitani, M. Kojima, Masahiro Yoshihara, Kazuhide Yoneya, Frank Tsai, Masanobu Shirakawa, M. Itoh, Siu Lung Chan, Toshiki Hisada, Yosuke Kato, Takashi Taira, Eiichi Makino, Binh Quang Le, Dai Nakamura, G. Hemink, Toshio Yamamura, Alex Mak, Shinji Miyamoto, Raul-Adrian Cernea, Yoshinao Suzuki, Shigeo Ohshima, Susumu Fujimura, Koji Hosono, Toru Miwa, Yoshiaki Takeuchi, T. Maruyama, T. Arizono, Toshitake Yaegashi, Masaru Koyanagi, K. Ino
Publikováno v:
ISSCC
NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da534784a76ae16b8a2968acd297f0f
https://doi.org/10.1109/isscc.2008.4523241
https://doi.org/10.1109/isscc.2008.4523241
Autor:
Shouchang Tsao, H. Waki, Ken Oowada, K. Hatakeyama, Y. Nozawa, Masanobu Shirakawa, M. Kojima, Y. Kameda, Ken Takeuchi, Makoto Iwai, Koji Hosono, S. Tanaka, Teruhiko Kamei, Jeffrey W. Lutze, Naoya Tokiwa, H. Otake, Yoshihiko Shindo, Shih-Chung Lee, Yohji Watanabe, M. Higashitani, Jia-Yi Fu, Hitoshi Shiga, Shigeo Ohshima, G. Hemink, Susumu Fujimura, N. Hayashida, Shinji Sato, A. Cernea, Jun Wan, Kiyofumi Sakurai, Mehrdad Mofidi, K. Kanazawa, Masayuki Ichige, Yan Li, Takuya Futatsuyama
Publikováno v:
ISSCC
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::596bfbd85fd37d29d66104d3b0e53369
https://doi.org/10.1109/isscc.2006.1696083
https://doi.org/10.1109/isscc.2006.1696083
Publikováno v:
Bulletin of the Chemical Society of Japan. 52:536-539
Three types of zinc complexes, chlorotris[2(1H)-pyridinethionato]dizinc (3), dichlorotetrakis[2(1H)-pyridinethionato]trizinc (4), and chloro[2(1H)-pyridinethionato]zinc (5) were produced by the reactions of bis[2(1H)-pyridinethionato]zinc (2) and zin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1f61cb476e5b5efb0052bcef18a5927
https://doi.org/10.1246/bcsj.52.536
https://doi.org/10.1246/bcsj.52.536
Publikováno v:
The Journal of Organic Chemistry. 44:3573-3574
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d60b15d49824459d575a59f9b3581d98
https://doi.org/10.1021/jo01334a027
https://doi.org/10.1021/jo01334a027