Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Susmita Ghose"'
Autor:
Abraham Arias, Nicola Nedev, Susmita Ghose, Juan Salvador Rojas-Ramirez, David Mateos, Mario Curiel Alvarez, Oscar Pérez, Mariel Suárez, Benjamin Valdez-Salas, Ravi Droopad
Publikováno v:
Advances in Materials Science and Engineering, Vol 2018 (2018)
β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (R
Externí odkaz:
https://doaj.org/article/afd2dfbdfe7747b39b36ed97143b839b
Speaker identification systems in a real-world scenario are tasked to identify a speaker amongst a set of enrolled speakers given just a few samples for each enrolled speaker. This paper demonstrates the effectiveness of meta-learning and relation ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c26a4120031069638d7c0c3556e1d2d1
http://arxiv.org/abs/2203.17218
http://arxiv.org/abs/2203.17218
Autor:
Javad R. Gatabi, Pradip Dhungana, Md. Shafiqur Rahman, Liang Hong, Raghvendra K. Pandey, Robert F. Klie, Alex Zakhidov, J.S. Rojas-Ramirez, Susmita Ghose, Ravi Droopad, Abbas Fahami
Publikováno v:
Journal of Materials Chemistry C. 4:10386-10394
We report on the use of SrTiO3 films on GaAs(001) substrates grown by molecular beam epitaxy (MBE) as intermediate buffer layers for the heteroepitaxial growth of ferromagnetic La0.7Sr0.3MnO3 (LSMO) and room temperature multiferroic (ferroelectric/an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2475c25c44e84cc4336ffb3372d6bc2e
https://doi.org/10.1039/c6tc03386e
https://doi.org/10.1039/c6tc03386e
Autor:
Kibog Park, Ravi Droopad, Shafiqur Rahman, Robert F. Klie, J.S. Rojas-Ramirez, Susmita Ghose, Hanbyul Jin, Liang Hong
Publikováno v:
Journal of Applied Physics. 124:139901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980ee157d89cd8180a311e76c7a84a72
https://doi.org/10.1063/1.5051998
https://doi.org/10.1063/1.5051998
Autor:
Md. Shafiqur Rahman, Susmita Ghose, Liang Hong, Pradip Dhungana, Abbas Fahami, Javad R. Gatabi, Juan S. Rojas-Ramirez, Alex Zakhidov, Robert F. Klie, R. K. Pandey, Ravi Droopad
Publikováno v:
Journal of Materials Chemistry C. 6:8555-8555
Correction for ‘Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors’ by Md. Shafiqur Rahman et al., J. Mater. Chem. C, 2016, 4, 10386–1039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf35eebe208c81ce47a5b6cedcd93582
https://doi.org/10.1039/c8tc90155d
https://doi.org/10.1039/c8tc90155d
Autor:
Liang Hong, Ravi Droopad, J.S. Rojas-Ramirez, Kibog Park, Shafiqur Rahman, Robert F. Klie, Susmita Ghose, Hanbyul Jin
Publikováno v:
Journal of Applied Physics. 122:095302
The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3276ba462dd77a4de8d93d18aa054cf
https://doi.org/10.1063/1.4985855
https://doi.org/10.1063/1.4985855
Autor:
Shafiqur Rahman, Javad R. Gatabi, Ravi Droopad, Susmita Ghose, J.S. Rojas-Ramirez, Raghvendra K. Pandey
Publikováno v:
Materials Research Express. 3:106408
The paper deals with the integration of well-known bismuth ferrite (BiFeO3) multiferroic oxide with GaAs semiconductor. First 5 nm ultrathin SrTiO3 films were grown on GaAs (001) substrates as an intermediate buffer layer by molecular beam epitaxy. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2b83bc0d184caa2206b289c3ef249e
https://doi.org/10.1088/2053-1591/3/10/106408
https://doi.org/10.1088/2053-1591/3/10/106408
Autor:
J.S. Rojas-Ramirez, Manuel Caro, Susmita Ghose, Abraham Arias, Nicola Nedev, Ravi Droopad, Md. Shafiqur Rahman
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:02L109
Epitaxial beta-gallium oxide (β-Ga2O3) has been deposited on c-plane sapphire by plasma-assisted molecular-beam epitaxy technique using two methods. One method relied on a compound Ga2O3 source with oxygen plasma while the second used elemental Ga s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8138b06101bd97383fcf4e248ecd4158
https://doi.org/10.1116/1.4942045
https://doi.org/10.1116/1.4942045