Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Sushobhan Avasthi"'
Autor:
Shubham Kumar Parate, Sandeep Vura, Subhajit Pal, Upanya Khandelwal, Rama Satya Sandilya Ventrapragada, Rajeev Kumar Rai, Sri Harsha Molleti, Vishnu Kumar, Girish Patil, Mudit Jain, Ambresh Mallya, Majid Ahmadi, Bart Kooi, Sushobhan Avasthi, Rajeev Ranjan, Srinivasan Raghavan, Saurabh Chandorkar, Pavan Nukala
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered
Externí odkaz:
https://doaj.org/article/dac830abf4994f59adb5e51c35cc65df
Publikováno v:
ACS Omega, Vol 7, Iss 9, Pp 7816-7824 (2022)
Externí odkaz:
https://doaj.org/article/a19861acb13149289064ffd8f7579e65
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075010-075010-6 (2018)
A wafer-scale method to obtain epitaxial germanium (Ge) on crystalline silicon (Si) using liquid-phase-crystallization (LPC) is presented. The technique provides a simple yet versatile method to grow epitaxial germanium on silicon with any crystallog
Externí odkaz:
https://doaj.org/article/c51947d5a01c477393297edda8a489f1
Autor:
Rudra Mukherjee, Pranjal Srivastava, Pallavi Singh, Shubhangi Bhardwaj, Anwesha Saha, Vinila Nellissery Viswanathan, Praveen C. Ramamurthy, Sushobhan Avasthi
Publikováno v:
Journal of Electronic Materials. 51:6699-6706
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2e5ecd6c74e4515ca67cf2e3772cf4
https://doi.org/10.1007/s11664-022-09914-y
https://doi.org/10.1007/s11664-022-09914-y
Autor:
Khushboo Kumari, Sandeep Kumar, Mahek Mehta, Avijit Chatterjee, Shankar Kumar Selvaraja, Sushobhan Avasthi
Publikováno v:
IEEE Sensors Journal. 22:11682-11689
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99b194ca8827a3055c48806b160e69c
https://doi.org/10.1109/jsen.2022.3174736
https://doi.org/10.1109/jsen.2022.3174736
Publikováno v:
Journal of Materials Chemistry C.
Using a combination of chemical vapor deposition, controlled nucleation, and surface energy optimization, we demonstrate record hole mobility in Cu2O thin-films and thin-film transistors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b71843f429be44a4c89aa6e30a85138
https://doi.org/10.1039/d3tc00789h
https://doi.org/10.1039/d3tc00789h
Publikováno v:
ACS Applied Electronic Materials. 4:367-374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc568592542403c822781c5aa96c241
https://doi.org/10.1021/acsaelm.1c01050
https://doi.org/10.1021/acsaelm.1c01050
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a8ba17add8793931c435c8eb94623f0
https://doi.org/10.1109/icee56203.2022.10118158
https://doi.org/10.1109/icee56203.2022.10118158
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e405db0640dc39209b6f57c0ae584e5
https://doi.org/10.1109/icee56203.2022.10117699
https://doi.org/10.1109/icee56203.2022.10117699
Autor:
Shubhangi Bhardwaj, Ashutosh Mohanty, Ranjan Das, Pallavi Singh, Ankit Singh, Dipankar Das Sarma, Sushobhan Avasthi
Publikováno v:
2022 IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27016a098e6d00e5654364214a681775
https://doi.org/10.1109/icee56203.2022.10118156
https://doi.org/10.1109/icee56203.2022.10118156