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Publikováno v:
Micro & Nano Letters. 13:684-689
This work reports a dual metal bipolar gate-based electrically doped tunnel field-effect transistor (DMBG-ED-TFET) which overcomes the ambipolarity issue and gives improved radio frequency (RF) and linearity metrics. The formations of n + , p + drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9947cd745dc3b6049b23b8aca1851a1b
https://doi.org/10.1049/mnl.2017.0814
https://doi.org/10.1049/mnl.2017.0814
