Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sushmit Goswami"'
Autor:
Sushmit Goswami, Dimitri A. Antoniadis, Devrishi Khanna, Ujwal Radhakrishna, Li-Shiuan Peh, Chirn Chye Boon, Pilsoon Choi, Hae-Seung Lee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:1163-1173
This paper presents the design of a fully integrated high-efficiency and high-power RF frontend for the IEEE 802.11p standard in GaN HEMT technology. An embedded transmitter/receiver (Tx/Rx) switching scheme and a dual-bias power amplifier linearizat
Publikováno v:
IEEE Journal of Solid-State Circuits. 49:2127-2140
Emerging wireless standards specify dozens of bands spanning several octaves, which need to be supported in form-factor and energy constrained mobile devices targeting ubiquitous connectivity. However, in current multi-band radio implementations, sig
Autor:
Tomas Palacios, Sushmit Goswami, Ujwal Radhakrishna, Dimitri A. Antoniadis, Li-Shiuan Peh, Pilsoon Choi
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A physics-based compact transport and charge model for RF-GaN HEMTs has been developed, including device self-heating, non-linear access region behavior, noise, etc. The model is validated against measurements from device-level DC up to circuit-level
Publikováno v:
2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
A broadband, efficient and linear RF power amplifier for 4G multi-standard micro-basestations is presented. With an optimized Class-J matching network and a new commercially available high voltage 10W GaN HEMT, output power around 40.5dBm is measured
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A tunable and highly digital RF frontend for multi-band TDD radios is integrated in 45nm SOI CMOS. The PA absorbs the TX branch of the TX/RX switch with no added loss. Peak PA output power is 27.5±0.5dBm from 1.6 to 3.4GHz, with up to 30% total effi
Autor:
Tino Copani, Hugh J. Barnaby, W. Chen, Sushmit Goswami, Bert Vermeire, Jason Silver, Sayfe Kiaei
Publikováno v:
ISSCC
Short-distance parallel optical links are poised to replace copper interconnects in high throughput links between computing nodes. In the receiver front-end of such systems, one- and two-dimensional monolithically integrated arrays of power- and area
Autor:
Kailash Chandrashekar, H. Karaki, Sayfe Kiaei, Bertan Bakkaloglu, A. Jain, Hoon Hee Chung, Tino Copani, Bert Vermeire, Jennifer Kitchen, Sushmit Goswami, Hugh J. Barnaby, I. Deligoz
Publikováno v:
CICC
A monolithic pulsed time-of-flight measurement system is presented in this paper. The circuit consists of an optical receiver front-end and time-to-digital converter. Received pulse amplitude detectors are also included to correct measurement for wal
Publikováno v:
ISCAS
The large input capacitance seen at the input of transimpedance amplifiers (TIA) used in optical receivers is usually the primary BW bottleneck. A new approach for increasing the BW of shunt feedback TIA's utilizing negative miller capacitance is pre
Autor:
Sushmit Goswami, Tino Copani, G. Fetzer, Sayfe Kiaei, Bert Vermeire, H. Karaki, A. Jain, Hugh J. Barnaby, R. Vercillo
Publikováno v:
ISSCC
This work reports 96Gb/s throughput transceiver modules, consisting of 64 parallel channels operated at 1.5Gb/s each, implemented on a 75 mum pitch in a 0.35 mum SiGe BiCMOS technology. The adopted technology provides high bulk resistivity, which is
Publikováno v:
ResearcherID
This paper presents the design of a high-efficiency and high-power RF frontend for the 802.11p standard, leveraging an embedded Tx/Rx switching scheme and a dual-bias power amplifier (PA) linearization technique. The fully integrated RF frontend is f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c3319ff8f47e82455976eb4ee1b5608
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