Zobrazeno 1 - 10
of 369
pro vyhledávání: '"Sushko, Peter V."'
Autor:
Anbalagan, Aswin kumar, Cummings, Rebecca, Zhou, Chenyu, Mun, Junsik, Stanic, Vesna, Jordan-Sweet, Jean, Yao, Juntao, Kisslinger, Kim, Weiland, Conan, Nykypanchuk, Dmytro, Hulbert, Steven L., Li, Qiang, Zhu, Yimei, Liu, Mingzhao, Sushko, Peter V., Walter, Andrew L., Barbour, Andi M.
Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and ide
Externí odkaz:
http://arxiv.org/abs/2409.10780
Autor:
Zhou, Chenyu, Mun, Junsik, Yao, Juntao, Anbalagan, Aswin kumar, Hossain, Mohammad D., McLellan, Russell A., Li, Ruoshui, Kisslinger, Kim, Li, Gengnan, Tong, Xiao, Head, Ashley R., Weiland, Conan, Hulbert, Steven L., Walter, Andrew L., Li, Qiang, Zhu, Yimei, Sushko, Peter V., Liu, Mingzhao
Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing con
Externí odkaz:
http://arxiv.org/abs/2309.12603
Autor:
Yama, Nicholas S., Chen, I-Tung, Chakravarthi, Srivatsa, Li, Bingzhao, Pederson, Christian, Matthews, Bethany E., Spurgeon, Steven R., Perea, Daniel E., Wirth, Mark G., Sushko, Peter V., Li, Mo, Fu, Kai-Mei C.
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for a
Externí odkaz:
http://arxiv.org/abs/2305.11436
Chromium iodide monolayers, which have different magnetic properties in comparison to the bulk chromium iodide, have been shown to form skyrmionic states in applied electromagnetic fields or in Janus-layer devices. In this work, we demonstrate that s
Externí odkaz:
http://arxiv.org/abs/2103.03149
Autor:
Muchharla, Baleeswaraiah1 (AUTHOR), Sushko, Peter V.2 (AUTHOR), Sadasivuni, Kishor K.3 (AUTHOR), Cao, Wei4 (AUTHOR), Tomar, Akash5 (AUTHOR), Elsayed–Ali, Hani4 (AUTHOR), Adedeji, Adetayo6 (AUTHOR), Karoui, Abdennaceur7 (AUTHOR), Spurgeon, Joshua M.8 (AUTHOR), Kumar, Bijandra1 (AUTHOR) bkumar@ecsu.edu
Publikováno v:
Small Structures. Feb2024, Vol. 5 Issue 2, p1-11. 11p.
Autor:
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark. D., Kaspar, Tiffany C., Chambers, Scott. A
Publikováno v:
Phys. Rev. Materials 3, 025401 (2019)
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with incre
Externí odkaz:
http://arxiv.org/abs/1811.11117
Autor:
Song, Miao, Liu, Jia, Ma, Xiaolong, Pang, Qin, Olszta, Matthew J., Silverstein, Joshua, Pallaka, Madhusudhan R., Sushko, Peter V., Mathaudhu, Suveen N., Powell, Cynthia, Devaraj, Arun, Gwalani, Bharat
Publikováno v:
In Journal of Materials Science & Technology 20 January 2023 134:197-208
Publikováno v:
In Journal of Materials Research and Technology January-February 2023 22:3340-3351
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Autor:
Lim, Zheng Hui, Quackenbush, Nicholas F., Penn, Aubrey, Chrysler, Matthew, Bowden, Mark, Zhu, Zihua, Ablett, James M., Lee, Tien-lin, LeBeau, James M., Woicik, Joseph C., Sushko, Peter V., Chambers, Scott A., Ngai, Joseph H.
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which
Externí odkaz:
http://arxiv.org/abs/1810.04648