Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sushil Tandukar"'
Autor:
Florian Huber, Alfred Plettl, Marian Caliebe, Klaus Thonke, Yisong Han, Colin J. Humphreys, Sebastian Bauer, Zongzhe Cheng, Tobias Meisch, Dominik Heinz, Sushil Tandukar, Ferdinand Scholz, Matthias Hocker
Publikováno v:
Journal of Crystal Growth. 440:69-75
In this article, the influence of the trench period and depth of pre-structured r-plane sapphire substrates on the metalorganic vapor phase epitaxy (MOVPE) growth of ( 11 2 ¯ 2 ) GaN is investigated. We found that a larger trench period is beneficia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021fef0f4a3767635dcc012dcf4f5248
https://doi.org/10.1016/j.jcrysgro.2016.01.014
https://doi.org/10.1016/j.jcrysgro.2016.01.014
Autor:
Il-Sug Chung, Sushil Tandukar
Publikováno v:
2018 23rd Opto-Electronics and Communications Conference (OECC).
A systematic study using ICP with Cl 2 /N 2 /Ar chemistry to fabricate sub-µm wide high aspect ratio III-V grating bars wafer bonded to a Si wafer for BIC laser is reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a5c2ae76e03a94a2bb41923465fd13
https://doi.org/10.1109/oecc.2018.8730039
https://doi.org/10.1109/oecc.2018.8730039
Publikováno v:
2018 23rd Opto-Electronics and Communications Conference (OECC).
We report on a new way of forming compact high-Q micro-cavities, based on quasi-bound states in the continuum. Using this approach, an optically pumped silicon-on-chip laser has been demonstrated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f4db81f9aff9d322ca9993dd5b0da0
https://doi.org/10.1109/oecc.2018.8730015
https://doi.org/10.1109/oecc.2018.8730015
Publikováno v:
2018 23rd Opto-Electronics and Communications Conference (OECC).
We report a contact scheme for high-speed InP-on-silicon vertical-cavity lasers. Using the contact scheme, light emitting diodes have been fabricated and characterized.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af485a4db0b567006912ff6a8b48a64
https://doi.org/10.1109/oecc.2018.8729938
https://doi.org/10.1109/oecc.2018.8729938