Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sushanta Bordoloi"'
Publikováno v:
IEEE Access, Vol 9, Pp 99828-99841 (2021)
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate–shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN /
Externí odkaz:
https://doaj.org/article/d469c3a8ad5544cd88dffd57974bd098
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:73-84
Publikováno v:
IEEE Access, Vol 9, Pp 99828-99841 (2021)
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate–shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN /
Autor:
Anamika Kalita, Neelotpal Sen Sarma, Bedanta Gogoi, Hridoy Jyoti Bora, Pranjal Barman, Sushanta Bordoloi, Gautomi Gogoi
Publikováno v:
RSC Advances. 11:35274-35279
Organic entities like suitably functionalized naphthalene diimide (NDI) exhibited logical behaviours in response to various external stimuli and can be used to develop digital logic operations. The present findings include utilization of two congener
Publikováno v:
2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT).
Publikováno v:
Journal of Electronic Materials. 49:2018-2031
Reliability has been one of the major concerns for AlGaN/GaN high-electron-mobility transistors (HEMTs) over the past decades owing to their high-power operation. Although significant progress has been made in recent years, to position AlGaN/GaN HEMT
Autor:
Dr. Pranjal Barman, Sushanta Bordoloi
Publikováno v:
Advances in Sustainability Science and Technology ISBN: 9789811690327
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb9878b37deaa9961abac9c4166205d
https://doi.org/10.1007/978-981-16-9033-4_42
https://doi.org/10.1007/978-981-16-9033-4_42
Publikováno v:
2021 IEEE 4th International Conference on Computing, Power and Communication Technologies (GUCON).
Converse piezoelectric strain leads to degradations such as structural deformation, creation of traps, etc. in AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, an approach to reduce the converse piezoelectric strain in the AlGaN b
This book is a collection of high-quality research papers presented at 8th International Conference on Internet of Things and Connected Technologies (ICIoTCT 2023), held at National Institute of Technology (NIT), Mizoram, India, during 29–30 Septem
This book includes the results from the 5th International Conference on Deep Learning, Artificial Intelligence and Robotics (ICDLAIR), held in National Institute of Technology, Kurukshetra, on December 07–09, 2023, which brought together visionarie