Výsledky vyhledávání - "Sushant Sonde"

Vertical Transistors Based on 2D Materials: Status and Prospects

Autor: Sushant Sonde, Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte

Publikováno v: Crystals, Vol 8, Iss 2, p 70 (2018)
Crystals (Basel) 8 (2018). doi:10.3390/cryst8020070
info:cnr-pdr/source/autori:Giannazzo, Filippo; Greco, Giuseppe; Roccaforte, Fabrizio; Sonde, Sushant S./titolo:Vertical Transistors Based on 2D Materials: Status and Prospects/doi:10.3390%2Fcryst8020070/rivista:Crystals (Basel)/anno:2018/pagina_da:/pagina_a:/intervallo_pagine:/volume:8

Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electroni

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3aef2737504adab14aa1cc592948537d
http://www.mdpi.com/2073-4352/8/2/70

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Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Autor: Hema C. P. Movva, Rik Dey, Sushant Sonde, Anupam Roy, Emanuel Tutuc, Amritesh Rai, Amithraj Valsaraj, Stefano Larentis, Leonard F. Register, Sanjay K. Banerjee, Sangwoo Kang, Jiwon Chang, Rudresh Ghosh, Samaresh Guchhait, Tanuj Trivedi

Publikováno v: Nano Letters. 15:4329-4336

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring var

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::935eb8ef80e1a29a380bbbc183f79703
https://doi.org/10.1021/acs.nanolett.5b00314

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Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

Autor: Weinan Zhu, Sushant Sonde, Sandra H. Aldave, Joon-Seok Kim, Deji Akinwande, Shixuan Yang, Li Tao, Nanshu Lu, Maruthi N. Yogeesh

Publikováno v: Nano Letters. 15:1883-1890

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobili

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6017b509d77ce6891a3141ff06b2947
https://doi.org/10.1021/nl5047329

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Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2

Autor: Amritesh Rai, Connor J. McClellan, Sushant Sonde, Chris M. Corbet, Sanjay K. Banerjee, Emanuel Tutuc

Publikováno v: ACS Nano. 9:363-370

We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature Ion/I(off) of 10(5). Many devices were studied with a maximu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c753b75ea426c6e722ae8ad4ef50176
https://doi.org/10.1021/nn505354a

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Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms

Autor: Kyounghwan Kim, Emanuel Tutuc, Chris M. Corbet, Connor J. McClellan, Sushant Sonde, Sanjay K. Banerjee

Publikováno v: ACS Nano. 8:10480-10485

We fabricate and characterize a set of dual-gated graphene field effect transistors using a novel physical vapor deposition technique in which titanium is evaporated onto the graphene channel in 10 Å cycles and oxidized in ambient to form a top-gate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1625dede0897f6b28168d0d2a8ce8360
https://doi.org/10.1021/nn5038509

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Improved Cleaning Process for Textured ∼25 μm Flexible Mono-Crystalline Silicon Heterojunction Solar Cells with Metal Backing

Autor: Sushant Sonde, Sayan Saha, Ajay Upadhyaya, E. U. Onyegam, Rajesh A. Rao, Sanjay K. Banerjee, Mohamed M. Hilali, Leo Mathew

Publikováno v: ECS Journal of Solid State Science and Technology. 3:Q142-Q145

An improved cleaning process is developed to remove front surface contamination for single heterojunction solar cells on textured surfaces on ∼25 μm thick exfoliated, flexible mono-crystalline silicon. The process is very effective in cleaning met

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4809605e28bf61612f83780a697d4a79
https://doi.org/10.1149/2.0041407jss

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Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices

Autor: Shriram Ramanathan, Liliana Stan, K.V.L.V Achari, Annadi, Jianqiang Lin, Sushant Sonde, Changyao Chen, Supratik Guha

Publikováno v: 2016 IEEE International Electron Devices Meeting (IEDM).

We demonstrate a solid-state spiking artificial neuron based upon an insulator-to-metal (IMT) transition material element that operates at an unprecedented low voltage (0.8 V). We have developed a general coupled electrical-thermal device model for I

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e6c82fb3aa5be389a628e4a1097b6ab
https://doi.org/10.1109/iedm.2016.7838541

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