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Autor:
Jan Kettler, Matthias Paul, Fabian Olbrich, Susanne Schreier, Jonatan Höschele, Michael Jetter, Simone Luca Portalupi, Peter Michler
Publikováno v:
Applied Physics Letters. 111:033102
By metal-organic vapor-phase epitaxy, we have fabricated InAs quantum dots (QDs) on InGaAs/GaAs metamorphic buffer layers on a GaAs substrate with area densities that allow addressing single quantum dots. The photoluminescence emission from the quant