Výsledky vyhledávání - "Susanne Ohsiek"

Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm CMOS High Performance Logic SOI Technologies

Autor: Rolf Stephan, Lutz Wilde, M. Weisheit, Lutz Herrmann, Alexander Wuerfel, Walter Hansch, Torben Kelwing, Hartmut Prinz, Bernhard Trui, Christoph Klein, Inka Richter, Rick Carter, Peter Kücher, S. Mutas, Falk Graetsch, Martin Trentzsch, Susanne Ohsiek, Anita Peeva, Andreas Naumann

Publikováno v: ECS Transactions. 33:3-14

Future scaling of complementary metal oxide semiconductor (CMOS) technology requires high-k (HK) dielectrics with metal gate (MG) electrodes to realize higher gate capacitances and low gate leakage currents [1]. During the last decade the semiconduct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f183ab8e314b3efbdf19c02cd2021381
https://doi.org/10.1149/1.3481586

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Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm

Autor: Jürgen Niess, Boris Bayha, Georg Roters, Michael Raab, Christoph Kirchner, Rolf Stephan, Susanne Ohsiek, Tilo Mantei, Karsten Wieczorek, Martin Trentzsch, Waltraud Dietl, Zsolt Nenyei, Christian Golz, Wilfried Lerch

Publikováno v: Materials Science Forum. :153-163

In this work we present a comprehensive comparison of ultra thin thermally nitrided (TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is a promising technique to increase the nitrogen concentration up to 25%. F

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e72e09f36cc4629a5f8e38e665aadfc
https://doi.org/10.4028/www.scientific.net/msf.573-574.153

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ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM

Autor: K. Seidell, Kornelia Dittmar, Mark Gerard Nolan, Dina H. Triyoso, M. Licbau, M. Weisheit, Robert Fox, Patrick Polakowski, Dirk Utess, Wenke Weinreich, Susanne Ohsiek

Publikováno v: ICICDT

Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta 2 O 5 and Hf-doped Ta 2 O 5 high-k MIM capacitors. We investigated the impact of precursor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ed9f3aa011476e361ca20f2eef6e5cf8
https://doi.org/10.1109/icicdt.2014.6838595

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Impact of precursors choice on characteristics of PEALD SiN for spacer applications

Autor: Dina H. Triyoso, J. K. Schaeffer, Markus Lenski, J. Shu, Klaus Hempel, Susanne Ohsiek

Publikováno v: ICICDT

As transistor size continues to shrink, the need for conformal spacer which is insensitive to loading condition arises. Previously we have reported improved device characteristics for transistors with PEALD SiN spacer compared to those with CVD SiN s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc09a66827936112add05890c976577a
https://doi.org/10.1109/icicdt.2013.6563305

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Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements

Autor: M. Geiss, Christoph Klein, Dieter Schmeisser, Peter Kücher, Michael Friedemann, Lukas Gerlich, Susanne Ohsiek

Publikováno v: 2011 IEEE International Interconnect Technology Conference.

A physical vapor deposition tool for 300 mm wafers was coupled with an angle resolved photoelectron spectroscopy tool (ARXPS) and used to study the growth of TaN single layer and TaN/Ta double layer diffusion barriers. The nitrogen content of TaN was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47b9a7cc9226480b48640e5bbfba5876
https://doi.org/10.1109/iitc.2011.5940322

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TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors

Autor: Susanne Ohsiek, Bernhard Trui, Tina Tauchnitz, Maximilian Drescher, Mahdi Shirazi, Wenke Weinreich, Simon D. Elliott, Jonas Sundqvist, Stefan Riedel, Konrad Seidel, P. Polakowski, Elke Erben

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 31:01A123

ZrO2 is of very high interest for various applications in semiconductor industry especially as high-k dielectric in metal–insulator–metal (MIM) capacitor devices. Further improvement of deposition processes, of material properties, and of integra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e6d1cd4c0c847992edda175ced13d48
https://doi.org/10.1116/1.4766281

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