Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Susan Emans"'
Autor:
Teresa A. Esposito, Nathaniel Mowell, Shravan Matham, Susan Emans, Monirul Islam, Rebekah Sheraw, Felix Levitov
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f31b473ee79e7ef8861eb86e9624a419
https://doi.org/10.1109/asmc57536.2023.10121146
https://doi.org/10.1109/asmc57536.2023.10121146
Autor:
Kevin Drayton, Matthew Sendelbach, Alexander Elia, Padraig Timoney, Susan Emans, Darren Zingerman, Marjorie Cheng, Benny Vilge, Charles Kang, Timothy Hughes, Taher Kagalwala, Naren Yellai, Alok Vaid, Jason Emans, Ronald Fiege
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In semiconductor manufacturing, the time it takes for wafers to process through the line is of utmost importance. Any delay in the processing of these wafers is very costly to the foundry and the end customer. Cycle time is one of the key metrics tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c28b5540552f4f3f687d57735f5ebe1
https://doi.org/10.1109/asmc.2019.8791789
https://doi.org/10.1109/asmc.2019.8791789
Autor:
Michael Shifrin, Robin Chao, Gangadhara Raja Muthinti, Matthew Sendelbach, Wei Ti Lee, Abraham Arceo de la Pena, Ronen Urenski, Susan Emans, Jacques Simon, John G. Gaudiello, Mary Breton, Aron Cepler, Yoav Etzioni
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXI.
Electrical test measurement in the back-end of line (BEOL) is crucial for wafer and die sorting as well as comparing intended process splits. Any in-line, nondestructive technique in the process flow to accurately predict these measurements can signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e3b8b681731177f89ff44a6321fdb8
https://doi.org/10.1117/12.2261091
https://doi.org/10.1117/12.2261091
Autor:
Tenko Yamashita, Shay Wolfling, Sivananda K. Kanakasabapathy, Gangadhara Raja Muthinti, Wei Ti Lee, Abraham Arceo de la Pena, Michael A. Guillorn, Juntao Li, Daniel Kandel, John G. Gaudiello, Susan Emans, K. Matney, Avron Ger, Matthew Wormington, Roy Koret, Aron Cepler, Matthew Sendelbach, Nicolas Loubet, Peter Gin, Robin Chao
Publikováno v:
SPIE Proceedings.
Multi-channel gate all around (GAA) semiconductor devices march closer to becoming a reality in production as their maturity in development continues. From this development, an understanding of what physical parameters affecting the device has emerge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d487a15a38043c2ce62c0f4c26a28bb
https://doi.org/10.1117/12.2261377
https://doi.org/10.1117/12.2261377
Autor:
Hyang Kyun (Helen) Kim, Boaz Brill, Igor Turovets, Susan Emans, Alok Vaid, Boris Sherman, Cornel Bozdog, Ronen Urensky, Matthew Sendelbach
Publikováno v:
SPIE Proceedings.
Improvement in metrology performance when using a combination of multiple optical channels vs. standard single optical channel is studied. Two standard applications (gate etch 4x and STI etch 2x) are investigated theoretically and experimentally. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a313703da3f0572224c9a1d1cb170656
https://doi.org/10.1117/12.881638
https://doi.org/10.1117/12.881638