Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Susan E. Babcock"'
Autor:
Sophia F. Platten, Rui Liu, Theodore Sauyet, Turner J. Williams, Donald E. Savage, Md Sariful Sheikh, Matthew Dawber, Zhonghou Cai, Tao Zhou, Susan E. Babcock, Paul G. Evans
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 081121-081121-8 (2023)
Amorphous BaTiO3 layers deposited on SrTiO3 (001) substrates at room temperature were subsequently crystallized using solid phase epitaxy (SPE). Heating an initially amorphous BaTiO3 layer in air at 650 °C for 3 h resulted in crystallization with co
Externí odkaz:
https://doaj.org/article/5a30b0da188b458ab268366a10428ee0
Autor:
Ayushi Rajeev, Weixin Chen, Jeremy D. Kirch, Susan E. Babcock, Thomas F. Kuech, Thomas Earles, Luke J. Mawst
Publikováno v:
Crystals, Vol 8, Iss 11, p 437 (2018)
Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission e
Externí odkaz:
https://doaj.org/article/ac725b07ba4c4dd7ad185b3fc921bd90
Autor:
Samuel D. Marks, Rui Liu, Yajin Chen, Qian Li, Steven J. Leake, Donald E. Savage, Susan E. Babcock, Tobias U. Schülli, Paul G. Evans
Publikováno v:
Crystal Growth & Design. 22:4043-4048
Autor:
Paul G. Evans, J. R. Schmidt, Donald E. Savage, Rui Liu, Peng Zuo, Tesia D. Janicki, Thomas F. Kuech, Susan E. Babcock, Adam D. Alfieri, Omar Elleuch, Zhongyi Wan
Publikováno v:
ACS Applied Materials & Interfaces. 12:57598-57608
A multistep phase sequence following the crystallization of amorphous Al2O3 via solid-phase epitaxy (SPE) points to methods to create low-defect-density thin films of the metastable cubic γ-Al2O3 polymorph. An amorphous Al2O3 thin film on a (0001)
Autor:
Susan E. Babcock, Thomas F. Kuech, Yingxin Guan, M. Humed Yusuf, Peng Zuo, Yajin Chen, Paul G. Evans
Publikováno v:
Crystal Growth & Design. 20:6001-6007
Low-temperature solid-phase epitaxy is a promising route for the synthesis of thin films of ScAlMgO4, a compound with lattice spacings close to compound semiconductors for which there are no practi...
Autor:
Yajin Chen, Thomas F. Kuech, Navoda Jayakodiarachchi, Paul G. Evans, Peng Zuo, Charles H. Winter, Susan E. Babcock, Wathsala L. I. Waduge
Publikováno v:
ACS Applied Nano Materials. 2:7449-7458
An atomic layer deposition (ALD) process is reported for the growth of nanoscale PrAlO3 thin films for two-dimensional electronics and memory device applications using tris(isopropylcyclopentadieny...
Autor:
Peng Zuo, Paul G. Evans, Patrick J. Strohbeen, Dongxue Du, Susan E. Babcock, John H. Booske, Samuel D. Marks, Jason R. Waldvogel, Dane Morgan, Jason K. Kawasaki, Rui Liu, Lin Lin, Donald E. Savage, Ryan Jacobs
SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room temperature resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c91e433ff28127c7859e00319ddf3e89
Autor:
Rui, Liu, Omar, Elleuch, Zhongyi, Wan, Peng, Zuo, Tesia D, Janicki, Adam D, Alfieri, Susan E, Babcock, Donald E, Savage, J R, Schmidt, Paul G, Evans, Thomas F, Kuech
Publikováno v:
ACS applied materialsinterfaces. 12(51)
A multistep phase sequence following the crystallization of amorphous Al
Autor:
Thomas F. Kuech, Max G. Lagally, RB Jacobson, Paul G. Evans, Yingxin Guan, Yajin Chen, M. Humed Yusuf, Susan E. Babcock
Publikováno v:
ACS Applied Materials & Interfaces. 9:41034-41042
Integration of emerging complex-oxide compounds into sophisticated nanoscale single-crystal geometries faces significant challenges arising from the kinetics of vapor-phase thin-film epitaxial growth. A comparison of the crystallization of the model
Autor:
Thomas F. Kuech, Honghyuk Kim, Luke J. Mawst, Yingxin Guan, Susan E. Babcock, Kamran Forghani
Publikováno v:
Journal of Crystal Growth. 464:39-48
The influence of the surface step termination on the metal-organic vapor phase epitaxy of GaAs 1−y Bi y was explored by examining the epitaxial layer growth rate, composition, and morphology characteristics on the offcut and mesa-patterned (001) Ga