Zobrazeno 1 - 10
of 197
pro vyhledávání: '"Susaki, T."'
Publikováno v:
Phys. Rev. B 84, 245124 (2011)
We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The Ti3+ sign
Externí odkaz:
http://arxiv.org/abs/1106.3619
Autor:
Seo, S. S. A., Han, M. J., Hassink, G. W. J., Choi, W. S., Moon, S. J., Kim, J. S., Susaki, T., Lee, Y. S., Yu, J., Bernhard, C., Hwang, H. Y., Rijnders, G., Blank, D. H. A., Keimer, B., Noh, T. W.
Publikováno v:
Phys. Rev. Lett. 104, 036401 (2010)
We report spectroscopic ellipsometry measurements of the anisotropy of the interband transitions parallel and perpendicular to the planes of (LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information about the electronic structure
Externí odkaz:
http://arxiv.org/abs/0912.3863
We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coeffic
Externí odkaz:
http://arxiv.org/abs/0810.3469
Autor:
Takizawa, M., Hotta, Y., Susaki, T., Ishida, Y., Wadati, H., Takata, Y., Horiba, K., Matsunami, M., Shin, S., Yabashi, M., Tamasaku, K., Nishino, N., Ishikawa, T., Fujimori, A., Hwang, H. Y.
Publikováno v:
Phys. Rev. Lett. 102, 236401 (2009)
At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-re
Externí odkaz:
http://arxiv.org/abs/0806.2191
We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideali
Externí odkaz:
http://arxiv.org/abs/0803.2792
Publikováno v:
Phys. Rev. Lett. 101, 096601 (2008)
We have investigated the extreme quantum limit of photogenerated electrons in quantum paraelectric SrTiO3. This regime is distinct from conventional semiconductors, due to the large electron effective mass and large lattice dielectric constant. At lo
Externí odkaz:
http://arxiv.org/abs/0803.0723
Publikováno v:
Phys. Rev. Lett. 99, 236805 (2007)
We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-depen
Externí odkaz:
http://arxiv.org/abs/0710.2174
We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits temperature depende
Externí odkaz:
http://arxiv.org/abs/0708.3725
Optically tuned dimensionality crossover in photocarrier-doped SrTiO$_3$: onset of weak localization
We report magnetotransport properties of photogenerated electrons in undoped SrTiO$_3$ single crystals under ultraviolet illumination down to 2 K. By tuning the light intensity, the steady state carrier density can be controlled, while tuning the wav
Externí odkaz:
http://arxiv.org/abs/0704.3680
Autor:
Wadati, H., Hotta, Y., Fujimori, A., Susaki, T., Hwang, H. Y., Takata, Y., Horiba, K., Matsunami, M., Shin, S., Yabashi, M., Tamasaku, K., Nishino, Y., Ishikawa, T.
Publikováno v:
Phys. Rev. B 77, 045122 (2008)
We have studied the electronic structure of multilayers composed of a band insulator LaAlO$_3$ (LAO) and a Mott insulator LaVO$_3$ (LVO) by means of hard x-ray photoemission spectroscopy, which has a probing depth as large as $\sim 60 {\AA}$. The Mot
Externí odkaz:
http://arxiv.org/abs/0704.1837